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  pd-drm Datasheet PDF File

For pd-drm Found Datasheets File :: 148    Search Time::1.078ms    
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    2SK1986-01 2SK1986

FUJI[Fuji Electric]
Part No. 2SK1986-01 2SK1986
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 1000 1000 4 16 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - E...DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=1000V Tch=25C VGS=0V Tch=125C VGS=3...
Description N-channel MOS-FET

File Size 213.45K  /  2 Page

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    2SK1984-01MR

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK1984-01MR
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 3 12 30 40 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Ele...DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V Tch=25C VGS=0V Tch=125C VGS=30...
Description N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 188.52K  /  2 Page

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    BUK444-60H

NXP Semiconductors N.V.
Philips Semiconductors
Part No. BUK444-60H
OCR Text ... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t hs ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t hs ); conditions: v gs 3 10 v fig.3. safe operating area. t hs = 25 ?c i d & i dm =...
Description    PowerMOS transistor
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 330uF; Voltage: 200V; Case Size: 18x35.5 mm; Packaging: Bulk 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 67.07K  /  7 Page

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    2SK1983-01

FUJI[Fuji Electric]
Part No. 2SK1983-01
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 3 12 30 60 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Ele...DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V Tch=25C VGS=0V Tch=125C VGS=30...
Description N-channel MOS-FET

File Size 211.56K  /  2 Page

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    NXP Semiconductors N.V.
Part No. BUK9528-55
OCR Text ... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c i d & i dm = ...
Description TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)

File Size 64.70K  /  8 Page

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    2SK1981-01

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK1981-01
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 10 40 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - El...DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V Tch=25C VGS=0V Tch=125C VGS=30...
Description N-channel MOS-FET 10 A, 500 V, 0.76 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 213.87K  /  2 Page

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    2SK1943-01

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
Part No. 2SK1943-01
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 30 80 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Ele...DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V Tch=25C VGS=0V Tch=125C VGS=30...
Description OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel MOS-FET

File Size 201.73K  /  2 Page

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    2SK2252-01L 2SK2252-01S

FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
Part No. 2SK2252-01L 2SK2252-01S
OCR Text ...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 8 32 30 50 150 -55 ~ +150 Unit V V A A V W C C > Equivalent Circuit - Ele...DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V Tch=25C VGS=0V Tch=125C VGS=30...
Description N-channel MOS-FET

File Size 190.92K  /  2 Page

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    PHB44N06T

NXP Semiconductors
Part No. PHB44N06T
OCR Text ... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 10 v fig.3. safe operating area. t mb = 25 ?c i d & i dm =...
Description TrenchMOS transistor Standard level FET

File Size 69.64K  /  8 Page

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For pd-drm Found Datasheets File :: 148    Search Time::1.078ms    
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