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  o.85 Datasheet PDF File

For o.85 Found Datasheets File :: 142296    Search Time::3.5ms    
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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ... applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V...85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (....
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... E R A NS I Y 14 .5M, 1982. 2 C O N T R O LLIN G D IME N S IO N : IN C H 3 O U TLINE C O N F O R MS T O J E DE C O U TL IN E T O -220 AB . 4 HE A TS IN K & LE A D M E AS U R E ME NT S D O NO T IN CL U DE B U R R S . TO-220AB Part Mark...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ... ID = 57A S D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V...85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (....
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ...urrent (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC...85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5....
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ...urrent (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Der...85 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V ...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... applications. D 2 P ak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C ...85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (....
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ....27 8 -CB 8X 0 .25 (.01 0) N O TE S : A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N T RO L LIN G D IM EN SIO N : IN C H ....
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ... Source-to-Drain Current (A) O.OV 380S PULSE WIDTH Tj = 150C VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Reverse Output Characteristics Fig 8. Typical Reverse Output Characteristics www...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... 3 6 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7807V RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Absolute Maximum R...85 84 83 1 2 3 Load current (A) 4 5 Vin=24V 5.0V Supply : Q1=Q2= IRF7807V 95 94 93 92 91 90 89 ...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ... and 5V. 4 5 SO-8 T o p V ie w Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss 16.8n...85 84 1 1.5 2 2.5 3 3.5 Load Current (A) 4 4.5 5 Vin = 10V Vin = 14V Vin = 24V Vin = 10V 90 89 1 ...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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