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  field-effect Datasheet PDF File

For field-effect Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF102028
Description 18 Watts, 86060 MHz GOLDMOS Field Effect Transistor
18 Watts 860-960 MHz GOLDMOS Field Effect Transistor
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 218.04K  /  7 Page

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    PTF10036

Ericsson Microelectronics
Part No. PTF10036
Description 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

File Size 220.13K  /  6 Page

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    HAL54X HAL542SF-E HAL542SF-K HAL543SF-E HAL543SF-K HAL546SF-K HAL548SF-K HAL542UA-E HAL543UA-E HAL546UA-E HAL548UA-E HAL

MICRONAS SEMICONDUCTOR HOLDING AG
Part No. HAL54X HAL542SF-E HAL542SF-K HAL543SF-E HAL543SF-K HAL546SF-K HAL548SF-K HAL542UA-E HAL543UA-E HAL546UA-E HAL548UA-E HAL542UA-K HAL543UA-K HAL546UA-K HAL548UA-K HAL546SF-E HAL548SF-E
Description Hall-Effect Sensor Family
MAGNETIC FIELD SENSOR-HALL EFFECT, 15-33mT, 0-20mA, RECTANGULAR, SURFACE MOUNT

File Size 1,598.50K  /  28 Page

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    MLX90251 MLX90251EGO-2 MLX90251LVA-2 MLX90251EVA-2

Melexis Microelectronic Systems
Part No. MLX90251 MLX90251EGO-2 MLX90251LVA-2 MLX90251EVA-2
Description MAGNETIC FIELD SENSOR-HALL EFFECT, 62-156mT, RECTANGULAR, THROUGH HOLE MOUNT
Programmable Linear Hall Effect Sensor

File Size 470.33K  /  22 Page

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    AH173-WL-B-B AH173-WL-B-A AH173-PL-B-A AH173-PL-B-B AH173-PG-B-A AH173-PG-B-B AH173-WL-A-B AH173 AH173-PG-7-A AH173-PG-7

Diodes, Inc.
磁阻传感
Diodes Inc.
DIODES[Diodes Incorporated]
Part No. AH173-WL-B-B AH173-WL-B-A AH173-PL-B-A AH173-PL-B-B AH173-PG-B-A AH173-PG-B-B AH173-WL-A-B AH173 AH173-PG-7-A AH173-PG-7-B AH173-PG-A-A AH173-PG-A-B AH173-PL-7-A AH173-PL-7-B AH173-PL-A-A AH173-PL-A-B AH173-WG-7-A AH173-WG-7-B AH173-WG-A-A AH173-WG-A-B AH173-WG-B-A AH173-WG-B-B AH173-WL-7-A AH173-WL-7-B AH173-WL-A-A
Description INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE 内部上拉霍尔效应锁存,高
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -6-6mT, 400mV, RECTANGULAR, THROUGH HOLE MOUNT
INTERNAL PULL-UP HALL EFFECT LATCH FOR HIGH TEMPERATURE MAGNETIC FIELD SENSOR-HALL EFFECT, -1.5-6mT, 0.30-0.40V, RECTANGULAR, THROUGH HOLE MOUNT

File Size 115.71K  /  9 Page

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    MLX90242 MLX90242LVA-CC03

Melexis Microelectronic Sys...
Melexis Microelectronic Systems
Melexis, Inc.
Part No. MLX90242 MLX90242LVA-CC03
Description The MLX90242 is a CMOS Linear Hall Effect sensor IC. It possesses active error correction circuitry
MAGNETIC FIELD SENSOR-HALL EFFECT, -50-50mT, 0.25-4.75V, RECTANGULAR, THROUGH HOLE MOUNT

File Size 205.72K  /  10 Page

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    55075-00-01-A 55075-00-01-C 55075-00-01-D 55075-00-01-E 55075-00-02-A 55075-00-02-C 55075-00-02-D 55075-00-02-E 55075-00

HAMLIN ELECTRONICS EUROPE LTD
HAMLIN Position and Movement Sensor Solutions
Part No. 55075-00-01-A 55075-00-01-C 55075-00-01-D 55075-00-01-E 55075-00-02-A 55075-00-02-C 55075-00-02-D 55075-00-02-E 55075-00-03-A 55075-00-03-C 55075-00-03-D 55075-00-03-E 55075-00-04-A 55075-00-04-C 55075-00-04-D 55075-00-04-E 55075-00-05-A 55075-00-05-C 55075-00-05-D 55075-00-05-E
Description MAGNETIC FIELD SENSOR-HALL EFFECT, 20mA, CYLINDRICAL
Geartooth Hall Effect Sensor Features and Benefits

File Size 75.52K  /  1 Page

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    NDH8321C

FAIRCHILD SEMICONDUCTOR CORP
Part No. NDH8321C
Description Dual N & P-Channel Enhancement Mode Field Effect Transistor(??娌????娌??澧?己??????绠?N娌??锛???垫?3.8A, 婕???靛?20V锛???????.035惟锛?娌??锛???垫?-2.7A, 婕???靛?-20V锛???????.07惟锛?
Dual N & P-Channel Enhancement Mode Field Effect Transistor

File Size 251.76K  /  12 Page

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    PTF10193

ERICSSON[Ericsson]
Part No. PTF10193
Description 12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

File Size 330.49K  /  6 Page

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    PTF10120

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10120
Description 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor 120瓦,1.8-2.0 GHz的GOLDMOS场效应晶体管
120 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor

File Size 419.28K  /  6 Page

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