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  dss Datasheet PDF File

For dss Found Datasheets File :: 44051    Search Time::2.344ms    
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    Ruichips Semiconductor Co., Ltd
Part No. RU30P5H
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage - 30 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c - 3.1 a...
Description P-Channel Advanced Power MOSFET

File Size 290.61K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU30P5D
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage - 30 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c - 3.1 ...
Description P-Channel Advanced Power MOSFET

File Size 271.99K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU30L15H
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage - 30 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward curren t t c =25 c - 14.5...
Description P-Channel Advanced Power MOSFET

File Size 296.19K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU30E7H
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 20 v t j maximum junct ion temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t a =25 c 3 a moun...
Description N-Channel Advanced Power MOSFET

File Size 263.97K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU3080L
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 9 0 a mou...
Description N-Channel Advanced Power MOSFET

File Size 281.45K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU3070M
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 50 a mou...
Description N-Channel Advanced Power MOSFET

File Size 296.09K  /  9 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU3040M
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward current t c =25 c 40 a mo...
Description N-Channel Advanced Power MOSFET

File Size 296.01K  /  9 Page

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    IRHNA7460SESCS

International Rectifier
Part No. IRHNA7460SESCS
OCR Text ...p max units t est conditions bv dss drain-to-source breakdown voltage 500 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.66 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source o...
Description 500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package

File Size 130.20K  /  8 Page

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    IRHNA7260SCS

International Rectifier
Part No. IRHNA7260SCS
OCR Text ...p max units t est conditions bv dss drain-to-source breakdown voltage 200 v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.26 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package

File Size 163.90K  /  8 Page

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    Ruichips Semiconductor Co., Ltd
Part No. RU30300R
OCR Text ...25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source vo ltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 30 0 a mo...
Description N-Channel Advanced Power MOSFET

File Size 446.12K  /  11 Page

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