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common-drain Datasheet PDF File

For common-drain Found Datasheets File :: 15518 Search Time::2.438ms
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				TOSHIBA
Part No.	SSM6J501NU
OCR Text	... 1% v in : t r , t f < 5 ns common source ta = 25c 0 ?2.5 v in out v dd 10 s r g ssm6j501nu 2014-03-01 3 ...drain?source voltage v ds (v) i d ? v ds drain current i d (a) 0 -10 0 -0.1 ...
Description	Small-signal MOSFET
File Size	199.84K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK2P60D
OCR Text	...n ? source voltage v ds (v) common source tc = 25c pulse test i d ? v gs drain current i d (a) gate? source voltage v gs (v) v ds ? v gs drain? source voltage v ds (v) gate ? source voltage v gs (v) ...
Description	Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	205.33K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BF861A BF861B BF861C
OCR Text	... - 25 ms bf861c 20 - 30 ms g os common source output conductance bf861a - - 200 ? s bf861b - - 250 ? s bf861c - - 300 ? s c iss input capac...drain current as a function of gate-source cut-off voltage; typical values. fig 3. common-source ou...
Description	N-channel FET
File Size	125.12K / 14 Page	View it Online	Download Datasheet

				Calogic, LLC
Part No.	U308-15
OCR Text	...0 v i g = 10ma, v ds = 0 g fg common-gate forward transconductance (note 1) 10 17 10 17 10 17 ms v ds = 10v, i d = 10ma f = 1khz g ogs common gate output conductance 250 250 250 m s c gd drain-gate capacitance 2.5 2.5 2.5 pf v gs = -10...
Description	N-Channel JFET High Frequency Amplifier
File Size	23.74K / 2 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STAP85025S
OCR Text	...? excellent thermal stability ? common source configuration ? p out = 25 w with 15.7 db gain @ 870 mhz / 13.6 v ? plastic package ? esd pr...drain gate source table 1. device summary order code marking package packing stap85025s stap85025s s...
Description	RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
File Size	167.68K / 13 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8107
OCR Text	... -20 -10 -8 -6 -4 -2.8 -2.6 -3 Common source Ta = 25C Pulse test -50 -4 -3 -10 -8 -6 ID - VDS Common source Ta = 25C Pulse test -16 ...Drain current -8 -2.2 Drain current -20 -2.4 -2.2 VGS = -2 V -4 VGS = -2 V -...
Description	Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
File Size	215.18K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TPC8108
OCR Text	...2.4 -12 -2.2 -8 -4 -3 -2.8 -2.6 Common source Ta = 25C Pulse test -50 -10 -4 -6 -8 ID - VDS Common source Ta = 25C Pulse test -3 -2.8 -30 -2.6 -20 -2.4 -2.2 -10 VGS = -2 V -40 (A) ID Drain current -4 VGS = -2 V Drai...
Description	Silicon P Channel MOS Type (U-MOSIII)
File Size	340.81K / 7 Page	View it Online	Download Datasheet

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