900v.2 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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900v.2 Datasheet PDF File

For 900v.2 Found Datasheets File :: 1950 Search Time::2.703ms
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				Microsemi
Part No.	APT80GA90LD40
OCR Text	...ating area @ t j = 150c 239a @ 900v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for sold...2.5 3.1 t j = 125c 2.2 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ...
Description	IGBT w/ anti-parallel diode
File Size	217.16K / 9 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2769-01MR
OCR Text	...che Rated N-channel MOS-FET 900V 5,5 3,5A 40W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters...2 10 4 2 450 75 40 20 40 50 25 1 500 3 Max. 4,5 500 1,0 100 5,5 3,5 Unit V V A mA nA S pF ...
Description	N-channel MOS-FET
File Size	279.53K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQA6N90C07 FQA6N90CF109 FQA6N90C FQA6N90C-F109
OCR Text	900V N-Channel MOSFET September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features * * * * * * * 6A, 900V, RDS(on) = 2.3 @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 11pF) Fast switching 100% avalanche teste...
Description	900V N-Channel MOSFET
File Size	794.02K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
Part No.	SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN
OCR Text	900V 1000V 900V 9.5A 9.5A 8.5A 8.5A W 1.10W W 1.10W W 1.30W W 1.30W POWER MOS IVTM N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M...2 (VDS > ID(ON) x RDS(ON) Max , VGS = 10V) Static Drain - Source On State Resistance 2 (VGS =10V , I...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
File Size	60.52K / 2 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SC4631LS
OCR Text	900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * Package Dimensions unit : mm 2079D [2SC4631LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=900V). Small Cob(typical Cob=5.0pF). Full-i...
Description	NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications 900V/300mA High-Voltage Amplifier,High-Voltage Switching Applications
File Size	28.26K / 3 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PF50W
OCR Text	...tional reliability C VCES = 900V G E VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A n-channel Benefits * Lower switching losses allow more cost-effective operation and hence efficient replacement of largerdie MOSFETs up to 100kHz...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	125.36K / 8 Page	View it Online	Download Datasheet

				Eupec
Part No.	BSM200GB170DLC
OCR Text	...nductive load) IC = 200A, VCE = 900V VGE = 15V, RG = 7,5W, Tvj = 25C VGE = 15V, RG = 7,5W, Tvj = 125C Anstiegszeit (induktive Last) rise tim...2 - 3 ISC LsCE 800 20 A nH Eoff 65 mJ Eon 90 mJ tf 0,03 0,03 s s td,off 0,80 0,90 s s tr 0,10 0,10 s...
Description	IC,BUFFER/DRIVER,DUAL,4-BIT,HC-CMOS,SOP,20PIN,PLASTIC
File Size	140.19K / 8 Page	View it Online	Download Datasheet

For 900v.2 Found Datasheets File :: 1950 Search Time::2.703ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |