...W) TC=25C -10 IB=-160mA -100mA -8 -80mA
2SB947, 2SB947A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
-10
VCE(sat) -- IC
IC/IB=30
Collector power dissipation PC (W)
Collector current IC (A)
40
-3
-1...
...V
-60 -80 1000 2000 10000 -2.8 -2.5 20 0.4 1.5 0.5
Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
V V MHz s s s
Ran...
...C)
Ratings -60 -80 -60 -80 -5 -8 -4 40 2 150 -55 to +150 Unit V
16.70.3
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB950 2SB950A 2SB950 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...Ratings -60 -80 -60 -80 -7 -12 -8 45 2 150 -55 to +150 Unit V
16.70.3
3.10.1
1.40.1
1.30.2
14.00.5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCB...
Description
Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
...
-3
-4
-5
-6
-7
-8
-1
-3
-10
-30
-100
Collector to base voltage VCB (V)
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (...
...-- -- -- -- -- -- -- -- -- -- 0.8 4.0 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C ...16 0.2 9.5 8.0 3.6 -0.08
+0.1
4.44 0.2 1.26 0.15
6.4
+0.2 -0.1
18.5 0.5
15.0 0...
...
(Ta=25C)
Ratings -27 -18 -7 -8 -5 20 150 -55 to +150 Unit V V V A A W
0.6 2.3 2.3 0.75 6.50.2 5.35 4.35
1:Base 2:Collector 3:Emitter ...16 12 8
Collector current IC (A)
-8
25C TC=100C -25C
-3
-6
-4
-2
-1.2
-1....
Description
Silicon PNP epitaxial planar type(For low-frequency power amplification)