... MHz s s s 260 min typ max -10 -50 Unit A A V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitte...100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25C IB=-300mA
2SB1155
IC -- VCE
C...
Description
Silicon PNP epitaxial planar type(For power switching)
... MHz s s s 260 min typ max -10 -50 Unit A A V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitte...100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) IB=-300mA -16 -200mA -12 -140mA -100mA -8...
Description
Silicon PNP epitaxial planar type(For power switching)
...uipment
7.00.3 3.00.2 2.00.2 3.50.2
Unit: mm
0 to 0.15
2.50.2
12.60.3 7.20.3
1.10.1
Parameter Collector-base voltage (Emitt...100
IC/IB=10
hFE IC
104
VCE=-4V
fT I C
104
VCE=-5V f=10MHz TC=25C
Forward current tr...
....3
7.00.3 3.00.2 2.00.2
3.50.2
0 to 0.15
2.50.2
(1.0)
(1.0)
1.10.1
1.00.2
Absolute Maximum Ratings TC = 25C
Paramet...100 -100 -2 10 000 -1.5 -2 mA V V MHz s s s A
Emitter-base cutoff current (Collector open) Forwa...
50.1 1.0
s Features
q q q
1.5 R0.9 R0.9
0.4
2.40.2 2.00.2 3.50.1
High collector to base voltage VCBO. High collector to emit...100 1 150 -55 ~ +150 1cm2
Unit V V V mA mA W C C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2
EI...