5.50.2 2.70.2 4.20.2
Unit: mm
4.20.2
s Features
q q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory lineari...16.70.3
3.10.1
4.0
1.40.1
1.30.2
Solder Dip
s Absolute Maximum Ratings
Parameter ...
Description
Silicon PNP epitaxial planar type(For power switching)
...es
0.70.1
Unit: mm
10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
q q q
s A...16.70.3 14.00.5
V
emitter voltage 2SB947A Emitter to base voltage Peak collector current Colle...
...2SD1275 and 2SD1275A
10.00.2 5.50.2 2.70.2 4.20.2
4.20.2
Unit: mm
q q
16.70.3
q
High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25...
...d 2SD1276A
0.70.1
10.00.2 5.50.2 2.70.2
4.20.2
Unit: mm
7.50.2
s Features
q q q
High foward current transfer ratio hFE...16.70.3
3.10.1
14.00.5
s Absolute Maximum Ratings
Parameter Collector to base voltage Coll...
Description
Silicon PNP epitaxial planar type Darlington(For power amplification and switching)
...2SD1277 and 2SD1277A
10.00.2 5.50.2 2.70.2 4.20.2
4.20.2
Unit: mm
7.50.2
s Features
q q q
4.0
High foward current tran...16.70.3
3.10.1
1.40.1
1.30.2
14.00.5
Solder Dip
s Absolute Maximum Ratings
Parame...
Description
Silicon PNP epitaxial planar type Darlington(For midium-speed switching)
...q q
Unit: mm
0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2
s
Absolut...16.70.3
7.50.2
High forward current transfer ratio hFE which has satisfactory linearity Low co...
Description
Silicon PNP epitaxial planar type(For power amplification)
...4.0 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- V V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -200 mA, IC...16 0.2 9.5 8.0 3.6 -0.08
+0.1
4.44 0.2 1.26 0.15
6.4
+0.2 -0.1
18.5 0.5
15.0 0...