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  33.40mm Datasheet PDF File

For 33.40mm Found Datasheets File :: 775    Search Time::1.875ms    
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    SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307

Infineon Technologies AG
Part No. SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307
OCR Text ...ue SPP_I SPA Unit A 111) 71) 33 340 0.6 4 20 30 33 W C Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

File Size 556.18K  /  15 Page

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    SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309

Infineon Technologies AG
Part No. SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309
OCR Text ...ue SPP_I SPA Unit A 111) 71) 33 340 0.6 4 20 30 33 W C Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology

File Size 567.48K  /  15 Page

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    ECOS1ABXXXXX ECOS1AEXXXXX ECOS1ADXXXXX

Panasonic Semiconductor
Part No. ECOS1ABXXXXX ECOS1AEXXXXX ECOS1ADXXXXX
OCR Text ...os1ca223ea 68000 35 x 50 5.50 6.33 0.021 0.020 ecos1aa683ea 27000 35 x 30 4.20 4.83 0.028 0.025 ecos1ca273ea 62000 40 x 40 5.42 6.23 0.023 0...40mm design and speci? cations are subject to change without notice. ask factory for technical s...
Description Large Can Aluminum Electrolytic Capacitors

File Size 180.97K  /  4 Page

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    WF512K32N-90H1M5A WF512K32 WF512K32F-120G1UC5 WF512K32F-120G1UC5A WF512K32F-120G1UI5 WF512K32F-120G1UI5A WF512K32F-120G1

Electronic Theatre Controls, Inc.
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ETC[ETC]
White Electronic Designs
Part No. WF512K32N-90H1M5A WF512K32 WF512K32F-120G1UC5 WF512K32F-120G1UC5A WF512K32F-120G1UI5 WF512K32F-120G1UI5A WF512K32F-120G1UM5 WF512K32F-120G1UM5A WF512K32F-120G2UC5 WF512K32F-120G2UC5A WF512K32F-120G2UI5 WF512K32F-120G2UI5A WF512K32F-120G2UM5 WF512K32F-120G2UM5A WF512K32F-120G4C5 WF512K32F-120G4C5A WF512K32F-120G4I5 WF512K32F-120G4I5A WF512K32F-120G4M5 WF512K32F-120G4M5A WF512K32F-120G4TC5 WF512K32F-120G4TC5A WF512K32F-120G4TI5 WF512K32F-120G4TI5A WF512K32F-120G4TM5 WF512K32F-120G4TM5A WF512K32F-120H1C5 WF512K32F-120H1C5A WF512K32F-120H1I5 WF512K32F-120H1I5A WF512K32F-120H1M5 WF512K32F-120H1M5A WF512K32F-150G1UC5 WF512K32F-150G1UC5A WF512K32F-150G1UI5 WF512K32F-150G1UI5A WF512K32F-150G1UM5 WF512K32F-150G1UM5A WF512K32F-150G2UC5 WF512K32F-150G2UC5A WF512K32F-150G2UI5 WF512K32F-150G2UI5A WF512K32F-150G2UM5 WF512K32F-150G2UM5A WF512K32F-150G4C5 WF512K32F-150G4C5A WF512K32F-150G4I5 WF512K32F-150G4I5A WF512K32F-150G4M5 WF512K32F-150G4M5A WF512K32F-150G4TC5 WF512K32F-150G4TC5A WF512K32F-150G4TI5 WF512K32F-150G4TI5A WF512K32F-150G4TM5 WF512K32F-150G4TM5A WF512K32F-150H1C5 WF512K32F-150H1C5A WF512K32F-150H1I5 WF512K32F-150H1I5A WF512K32F-150H1M5 WF512K32F-150H1M5A WF512K32F-60G1UC5 WF512K32F
OCR Text ...1 A10 A9 A15 VCC CS1 NC I/O3 22 33 23 I/O15 I/O14 I/O13 I/O12 OE A17 WE1 I/O7 I/O6 I/O5 I/O4 I/O24 I/O25 I/O26 A7 A12 NC A13 A8 I/O16 I/O17 ...40mm Low Capacitance, CQFP (Package 501) G4T = 40mm Low Profile CQFP (Package 502) ACCESS TIME (ns) ...
Description REED RELAY, 4PST, HG WET, 12V, DIODE RoHS Compliant: No
512Kx32 5V FLASH MODULE, SMD 5962-94612 512Kx32 5V的闪存盘,贴962-94612
RES 3K-OHM 5% 0.75W 250PPM THK-FILM SMD-2010 TR-7-PA 512Kx32 5V的闪存盘,贴962-94612
Reed Relay; Contacts:SPST; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:DIP-14; Relay Mounting:PC Board; Contact Carrying Power:10W
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Dry Reed Relay; Contacts:DPST-2NO; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
x32 Flash EEPROM Module
100ns; 5V power supply; 512K x 32 flash module, SMD 5962-94612

File Size 159.42K  /  15 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP47N10 SPB47N10 SPI47N10
OCR Text ...duct Summary VDS RDS(on) ID 100 33 47 P-TO220-3-1 V m A Type SPP47N10 SPB47N10 SPI47N10 Package P-TO220-3-1 P-TO263-3-2 P-...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL

File Size 509.17K  /  8 Page

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    SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309

Infineon Technologies AG
http://
Part No. SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309
OCR Text ... Value SPA Unit A 11 1) 71) 33 340 0.6 11 20 30 33 W C V/ns A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, sing...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology

File Size 652.57K  /  16 Page

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    INFINEON[Infineon Technologies AG]
Part No. BSO612CV
OCR Text ...V, VGS = 10 V, ID = 3 A , R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 Rise time tr N P - VDD = 30 V, VGS = 10 V, ID = 3 A, R G = 33 VDD = -30 V, V GS = -10 V, ID = -2 A, RG = 27 Turn-off delay time td(off) N P ...
Description Low Voltage MOSFETs - SIPMOS, Complementary, 60V, SO-8, RDSon(N/P) = 0.12/0.30Ohm, Id(N) = 3.1A, Id(P) = -2.0A, NL
SIPMOS Small-Signal-Transistor

File Size 155.39K  /  13 Page

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    SPU28N03L SPD28N03L Q67040-S4139-A2 Q67040-S4142-A2

SIEMENS[Siemens Semiconductor Group]
Part No. SPU28N03L SPD28N03L Q67040-S4139-A2 Q67040-S4142-A2
OCR Text ...= 6.2 Rise time tr - 33 50 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Turn-off delay time t d(off) - 12 18 VDD = 15 V, V GS = 4.5 V, ID = 30 A, RG = 6.2 Fall time tf - 22 33 VDD = 15 V, ...
Description SIPMOS Power Transistor

File Size 92.20K  /  10 Page

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    BSO215C Q67041-S4025

Infineon Technologies AG
Part No. BSO215C Q67041-S4025
OCR Text ..., VGS = 4.5 V, I D = 3 A, R G = 33 VDD = -10 , V GS = -4.5 V, ID = -3 A, R G = 13 Rise time tr N P - VDD = 10 V, VGS = 4.5 V, I D = 3 A, R G = 33 VDD = -10 , V GS = -4.5 V, ID = -3 A, R G = 13 Turn-off delay time td(off) N ...
Description SIPMOS Small-Signal-Transistor

File Size 154.52K  /  13 Page

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    BSO315C Q67041-S4014

Infineon Technologies AG
Part No. BSO315C Q67041-S4014
OCR Text ...on delay time td(on) N P 22 33 144 107 20 84 30 90 ns VDD = 15 V, VGS = 4.5 V, I D = 2.9 A, RG = 33 VDD = -15 V, V GS = -4.5 V, I D = -1.8 A, R G = 24 Rise time tr N P - VDD = 15 V, VGS = 4.5 V, I D = 2.9 A, RG = 33 VDD...
Description Dual N- and P-Channel SIPMOS Small-Si...
SIPMOS Small-Signal-Transistor

File Size 149.79K  /  13 Page

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