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INTERSIL[Intersil Corporation]
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Part No. |
HGTP14N40F3VL FN3407
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OCR Text |
...= 10A, RG = 25, L = 550H, VCL = 320v, VGE = 5V, TC = +125oC L = 2.3mH, VG = 5V, Figure 13 TC = +150oC TC = +25oC
Inductive Use Test
UIS
12 17 -
1.5
-
A A
oC/W
Thermal Resistance
RJC
3-51
HGTP14N40F3VL Typical ... |
Description |
14A/ 400V N-Channel/ Logic Level Voltage Clamping IGBT 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT From old datasheet system
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File Size |
84.60K /
5 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
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OCR Text |
... Drain Current
IDSS
VDS = 320v, VGS = 0V VGS = 20V
Gate to Source Leakage Current
IGSS
Drain to Source On-State Voltage Drain to Source On Resistance
VDS(ON) rDS(ON)12
VGS = 12V, ID = 21A ID = 13A, VGS = 12V
Turn-On ... |
Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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File Size |
76.16K /
8 Page |
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it Online |
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Microsemi, Corp.
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Part No. |
APT4020BVFRG
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OCR Text |
...voltage drain current (v ds = 320v v dss , v gs = 0v, t c =125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5635 rev a 5-2006 maximum ratings all ratings: t c... |
Description |
Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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File Size |
69.96K /
4 Page |
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it Online |
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ST Microelectronics
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Part No. |
STB11NB40
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OCR Text |
... charge gate-drain charge v dd =320v i d =10.7a v gs = 10 v 29.5 10.6 11.8 43 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =320v i d =10.7... |
Description |
N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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File Size |
246.96K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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