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  0.0002 Datasheet PDF File

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    2SJ353 2SJ353-T D11216EJ1V0DS00

NEC[NEC]
Part No. 2SJ353 2SJ353-T D11216EJ1V0DS00
OCR Text ... PACKAGE DIMENSIONS (in mm) 7.0 MAX. 2.0 1.2 9.0 MAX. 0.55 0.1 4.0 MAX. 12.0 MIN. 0.8 0.1 0.6 0.1 FEATURES * Radial taping supported * Can be directly driven by output of 5-V IC * Low ON resistance RDS(on) = 0.68 MAX. @VGS = -4 V,...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60

File Size 55.23K  /  6 Page

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    2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00

NEC[NEC]
Part No. 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
OCR Text ...PACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 1.5 0.1 FEATURES * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.60 MAX. @VGS = -4 V, ID = -1.0 A RDS(on) = 0.35 MAX. @VGS = -10 V, ID = -1.0 A 0.8 MIN. S 0.42 0.06 ...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)

File Size 64.46K  /  6 Page

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    2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00

NEC[NEC]
Part No. 2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00
OCR Text ...PACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 1.5 0.1 FEATURES * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.95 MAX. @VGS = -4 V, ID = -1.0 A RDS(on) = 0.50 MAX. @VGS = -10 V, ID = -1.0 A 0.8 MIN. S 0.42 0.06 ...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOSFET

File Size 65.63K  /  6 Page

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    2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2

NEC[NEC]
Part No. 2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2
OCR Text ...ackage Drawings (unit: mm) 5.7 0.1 2.0 0.2 1.5 0.1 FEATURES 1.0 1 0.5 0.1 2 3 * New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages * Can be d...
Description P-channel MOS FET(-30V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
From old datasheet system

File Size 63.14K  /  8 Page

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    2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491

NEC[NEC]
Part No. 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491
OCR Text ...ver and DC/DC converter. 1 5.7 0.1 2.0 0.2 1.5 0.1 2 3 FEATURES * New-type compact package Has advantages of packages for small signals and for power transistors, and compensates those disadvantages * Can be directly driven by an...
Description From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 93.97K  /  6 Page

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    2SJ361

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ361
OCR Text ...SS V(BR)GSS I GSS -20 20 -- -- -0.5 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.15 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.28 0.85 0.3 3.2 130 0.6 350 1650 7280 6950 -1.0 530 Max -- -- 10 -10 -1.5 0.4 1.5 -- -- -- -...
Description Silicon P-Channel MOS FET

File Size 42.04K  /  9 Page

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    2SJ363

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ363
OCR Text ... V(BR)GSS I GSS -30 20 -- -- -1.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 1.4 -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.6 0.35 2.0 2.1 100 0.25 1.65 8 25.9 14.9 Max -- -- 5 -1 -2.0 0.75 0.45 -- -- -- -- -- -- -- -- Unit V V A A V ...
Description Silicon P-Channel MOS FET

File Size 36.88K  /  7 Page

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    2SJ364

PANASONIC[Panasonic Semiconductor]
Part No. 2SJ364
OCR Text ...unit: mm 2.10.1 s Features 0.65 0.425 1.250.1 0.425 1 2.00.2 1.30.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25C) 0.2 Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipa...
Description Silicon P-Channel Junction FET

File Size 30.25K  /  2 Page

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    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text ...g 1 Ratings -30 20 -3 -5 -3 0.9 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)G...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...(BR)GSS I GSS Min -20 10 -- -- -0.5 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to d...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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