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-20v-4a Datasheet PDF File

For -20v-4a Found Datasheets File :: 5114 Search Time::2.578ms
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				Alpha & Omega Semiconductors
Part No.	AO3415A AO3415A11
OCR Text	20v p-channel mosfet general description product summary v ds -20v i d (at v gs =-4.5v) -4a r ds(on) (at v gs = -4.5v) < 41m w r ds(on) (at v gs = -2.5v) < 53m w r ds(on) (at v gs = -1.8v) < 65m w esd protected symbol v ...
Description	20V P-Channel MOSFET
File Size	316.75K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO3415 AO341511
OCR Text	20v i d (at v gs =-4.5v) -4a r ds(on) (at v gs = -4.5v) < 41m w r ds(on) (at v gs = -2.5v) < 53m w r ds(on) (at v gs = -1.8v) < 65m w esd protected symbol v ds v -20 absolute maximum ratings t a =25c unless otherwise no...
Description	20V P-Channel MOSFET
File Size	279.98K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHY3230CM JANSR2N7381 JANSF2N7381 JANSG2N7381 JANSH2N7381 IRHY7230CM IRHY8230CM
OCR Text	...leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d = 9.4a q gs gate-to-source charge ? ? 10 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 2...
Description	9.4 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
File Size	135.89K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc.
Part No.	FY4AEJ-03
OCR Text	... d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 30v, v gs = 0v i d = 1ma, v ds = 10v i d = 4a, v gs = 10v i d = 2a, v gs = 4v i d = 4a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 15v, i d = 2a, v gs = 10v, r gen...
Description	FY4AEJ-03 FY4AEJ - 03
File Size	144.04K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHY7130CMPBF IRHY7130CM-15
OCR Text	...leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 50 v gs =12v, i d =14.4a q gs gate-to-source charge ? ? 10 nc v ds = 50v q gd gate-to-drain (?miller?) charge ? ? 20...
Description	Simple Drive Requirements
File Size	122.35K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSR2N7381 JANSH2N7381
OCR Text	...e leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 9.4a q gs gate-to-source charge 10 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge ...
Description	HEXFET Transistor(HEXFET 晶体
File Size	122.81K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSH2N7380 JANSR2N7380
OCR Text	...e leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 14.4a q gs gate-to-source charge 10 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge...
Description	HEXFET Transistor(HEXFET 晶体
File Size	98.02K / 8 Page	View it Online	Download Datasheet

				Hammond Manufacturing Co.
Part No.	1640SE
OCR Text	...25a 8v @ 4.5a 164d20 162d20 1.1 20v c.t. @ .055a 10v @ .11a 164e20 162e20 2.4 20v c.t. @ .12a 10v @ .24a 164f20 162f20 6 20v c.t. @ .3a 10v ...4a 164g28 162g28 12 28v c.t. @ .42a 14v @ .84a 164h28 162h28 20 28v c.t. @ .7a 14v @ 1.4a 164j28 162...
Description
File Size	319.77K / 2 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	ILA03N60 ILD03N60
OCR Text	...urrent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =3.0a - 1.5 - s capacities, gate charge, a...4a 6a fullpak other packages t c , case temperature t c , case temperature figure 3. po...
Description	3 A, 600 V, N-CHANNEL IGBT, TO-220AB 4.5 A, 600 V, N-CHANNEL IGBT, TO-252AA
File Size	327.18K / 14 Page	View it Online	Download Datasheet

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