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SP8808DG SSD3030P L89DTR2G 16MU20MU MM3ZB12H 3223EE KSMU9N25 R5030218
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    NSBLL121A

NICHIA CORPORATION
Part No. NSBLL121A
OCR Text ...while the led is hot. * when using a pick and place machine, choose an appropriat e nozzle for this product. using a pick-and-place nozzle with a smaller diameter than the size of the led's em itting surface will cause damage to...
Description SPECIFICATIONS FOR WARM WHITE LED

File Size 469.24K  /  19 Page

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    ZE20SDU-00

List of Unclassifed Manufacturers
List of Unclassifed Man...
Part No. ZE20SDU-00
OCR Text ...ade and system configuration by using modem at command set easy to use windows configuration tool available features pin assignment gnd pc_5/factory_rst pc_6/gpio0 pc_7/dtr/gpio1 pa_7/dsr/gpio2 pb_3/cts/gpio3 pb_4/rts/gpio4 pa_0/mosi/gp...
Description ZigBee OEM module ProBee-ZE20S

File Size 318.91K  /  2 Page

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Part No. UPD703308GC-XXX-8BT
OCR Text ...s must be fixed high or low by using pull-up or pull-down circuitry. each unused pin should be connected to v dd or gnd via a resistor if there is a possibility that it will be an output pin. all handling related to unused pins must b...
Description 32-BIT, MROM, 20 MHz, RISC MICROCONTROLLER, PQFP80

File Size 4,875.72K  /  758 Page

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    TOSHIBA
Part No. TC7761WBG
OCR Text ...inst electrostatic discharge by using an earth strap, a conductive mat and an ionizer. ensure also that the ambient temperature and relative humidity are maintained at reasonable levels. t c7761 wbg 2014- 05- 15 2 4. block di...
Description Wireless power charger LSI

File Size 548.56K  /  29 Page

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    TOSHIBA
Part No. SSM6N58NU
OCR Text ...0 to 150 unit v a a w w note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabilit...
Description Small-signal MOSFET 2 in 1

File Size 230.97K  /  9 Page

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    SSM5H11TU

Toshiba Semiconductor
Part No. SSM5H11TU
OCR Text ... t stg ? 55 to 125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signifi...
Description Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)

File Size 214.28K  /  8 Page

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    SSM3J334R

Toshiba Semiconductor
Part No. SSM3J334R
OCR Text ... t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th is product to decrease in the reliability signi...
Description TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
Small-signal MOSFET

File Size 222.76K  /  6 Page

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    Panasonic
Part No. MN4516BS
OCR Text ...al attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical information described in this book is to be exported or provided to non-re...
Description Microcomputers Application-Specific Standard-Product ICs

File Size 393.90K  /  7 Page

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    Panasonic
Part No. MN1876476
OCR Text ...al attention and precautions in using the technical information and semiconductors described in this book (1) if any of the products or technical information described in this book is to be exported or provided to non-re...
Description Microcomputers Application-Specific Standard-Product ICs

File Size 203.56K  /  3 Page

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