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Macronix 旺宏
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Part No. |
MX29L8100B MX29L8100T MX29L8100T_B 29L8100T
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OCR Text |
...on, the combination of advanced tunnel oxide processing and low internal electric fields for erase and program operations produce reliable cycling. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi proces... |
Description |
8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH EEPROM From old datasheet system
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File Size |
182.09K /
28 Page |
View
it Online |
Download Datasheet
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INTEL[Intel Corporation]
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Part No. |
A28F010
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OCR Text |
...into Intel's ETOX TM III (EPROM tunnel Oxide) process technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V VPP su... |
Description |
1024K (128K x 8) CMOS FLASH MEMORY
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File Size |
290.64K /
23 Page |
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it Online |
Download Datasheet
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Intel
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Part No. |
A28F010 29026604
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OCR Text |
...into Intel's ETOX TM III (EPROM tunnel Oxide) process technology Advanced oxide processing an optimized tunneling structure and lower electric field combine to extend reliable cycling beyond that of traditional EEPROMs With the 12 0V VPP su... |
Description |
1024K (128K x 8) CMOS FLASH MEMORY From old datasheet system
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File Size |
246.10K /
23 Page |
View
it Online |
Download Datasheet
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Price and Availability
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