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    FDD5810 FDD581007 FDD5810-F085

Fairchild Semiconductor
Part No. FDD5810 FDD581007 FDD5810-F085
OCR Text Trench(R) MOSFET October 2007 FDD5810 N-Channel Logic Level Trench(R) MOSFET 60V, 36A, 27m Features RDS(ON) = 22m (Typ.), VGS = 5V, ID = 29A Qg(5) = 13nC (Typ.), VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single P...
Description N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET

File Size 259.88K  /  7 Page

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    FDD5353

Fairchild Semiconductor, Corp.
Part No. FDD5353
OCR Text Trench(R) MOSFET March 2008 FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3m Features Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested RoHS Compliant (R) tm Ge...
Description 60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape &amp; Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ

File Size 281.26K  /  6 Page

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    FGA70N30TD

Fairchild Semiconductor
Part No. FGA70N30TD
OCR Text Trench IGBT December 2007 FGA70N30TD 300V, 70A PDP IGBT Features * High current capability * Low saturation voltage: VCE(sat) =1.5V @ IC = 40A * High input impedance * Fast switching * RoHS complaint tm General Description Us...
Description 300V, 70A PDP IGBT

File Size 593.32K  /  9 Page

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    FGA25N120FTD

Fairchild Semiconductor
Part No. FGA25N120FTD
OCR Text Trench IGBT April 2008 FGA25N120FTD 1200V, 25A Field Stop Trench IGBT Features * Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) =1.6V @ IC = 25A * High input impedance * RoHS complaint tm ...
Description 1200V, 25A Field Stop Trench IGBT

File Size 695.07K  /  9 Page

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    SKIM306GD12E4

Semikron International
Part No. SKIM306GD12E4
OCR Text ... Values Unit SKiM(R) 63 Trench IGBT Modules SKiM306GD12E4 Tj = 175 C IFnom Features * IGBT 4 Trench Gate Technology * Solderless sinter technology * VCE(sat) with positive temperature coefficient * Low inductance case * I...
Description Trench IGBT Modules

File Size 172.83K  /  5 Page

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    SEMIX452GAL126HDS

Semikron International
Part No. SEMIX452GAL126HDS
OCR Text trench igbt modules semix452gal126hds features ? homogeneous si ? trench = trenchgate technology ?v ce(sat) with positive temperature coefficient ? high short circuit capability ? ul recognised file no. e63532 typical applications* ?ac in...
Description IGBT Modules

File Size 416.33K  /  5 Page

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    NX3020NAKT

NXP Semiconductors
Part No. NX3020NAKT
OCR Text trench mosfet 29 october 2013 product data sheet scan or click this qr code to view the latest information for this product 1. general description n-channel enhancement mode field-effect transistor (fet) in a small sot416 (sc-75) surface-mo...
Description 30 V, 180 mA N-channel Trench MOSFET

File Size 233.61K  /  13 Page

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    PMZ600UNE

NXP Semiconductors
Part No. PMZ600UNE
OCR Text trench mosfet 9 may 2014 product data sheet scan or click this qr code to view the latest information for this product 1. general description n-channel enhancement mode field-effect transistor (fet) in a leadless ultra small dfn1006-3 (sot8...
Description 20 V, N-channel Trench MOSFET

File Size 232.41K  /  15 Page

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    FGPF45N45T

Fairchild Semiconductor
Part No. FGPF45N45T
OCR Text Trench IGBT December 2007 FGPF45N45T 450V, 45A PDP Trench IGBT Features * High Current Capability * Low saturation voltage: VCE(sat) =1.6V @ IC = 45A * High input impedance * Fast switching * RoHS complaint tm General Descrip...
Description 450V, 45A PDP Trench IGBT

File Size 563.79K  /  7 Page

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    FGPF4633

Fairchild Semiconductor
Part No. FGPF4633
OCR Text Trench IGBT February 2010 FGPF4633 330V PDP IGBT Features * High current capability * Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A * High input impedance * Fast switching * RoHS compliant tm General Description Using ...
Description 330V PDP IGBT

File Size 645.07K  /  8 Page

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