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    NVM3060

ETC[ETC]
Part No. NVM3060
OCR Text ...pins. The integrated protection structures are not shown. The letter "E" means enhancement, the letter "D" depletion. VSUP E GND Fig. 2-3: Pins 4, 5, and 6, Inputs VSUP D D VSUP E D GND Fig. 2-2: Pins 2 and 3, Input S E E GND...
Description 4096-Bit EEPROM

File Size 157.45K  /  13 Page

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    TS68020VF25 TS68020 TS68020DESC02XA TS68020DESC02XC TS68020DESC02YA TS68020DESC02YC TS68020DESC03XA TS68020DESC03XC TS68

ATMEL[ATMEL Corporation]
Part No. TS68020VF25 TS68020 TS68020DESC02XA TS68020DESC02XC TS68020DESC02YA TS68020DESC02YC TS68020DESC03XA TS68020DESC03XC TS68020DESC03YA TS68020DESC03YC TS68020DESC04XA TS68020DESC04XC TS68020DESC04YA TS68020DESC04YC TS68020MF16 TS68020NBSP TS68020VR25 TS68020MFB_C16 TS68020MFB_C20 TS68020MFB_C25 TS68020VR20 TS68020MF1B_C16 TS68020MF1B_C20 TS68020MF1B_C25 TS68020MF20 TS68020MF25 TS68020MR16 TS68020MR1B_C16 TS68020MR1B_C20 TS68020MR1B_C25 TS68020MR20 TS68020MR25 TS68020MRB_C16 TS68020MRB_C20 TS68020MRB_C25 TS68020VF120 TS68020VF16 TS68020VF1B_C20 TS68020VR16 TS68020VR1B_C20
OCR Text ...uses as well as 32-bit internal structures. Many techniques were utilized to improve performance and at the same time maintain compatibility with other processors of the TS68000 Family. Among the improvements are new addressing modes which ...
Description HCMOS 32-bit Virtual Memory MPU, 16/20/25 MHz
HCMOS 32-bit Virtual Memory Microprocessor

File Size 1,217.56K  /  45 Page

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    TS68882VF25 TS68882 TS68882DESC01XA TS68882DESC01YA TS68882DESC02XA TS68882DESC02YA TS68882DESC03XA TS68882DESC03YA TS68

ATMEL[ATMEL Corporation]
Part No. TS68882VF25 TS68882 TS68882DESC01XA TS68882DESC01YA TS68882DESC02XA TS68882DESC02YA TS68882DESC03XA TS68882DESC03YA TS68882DESC04XA TS68882DESC04YA TS68882VR25 TS68882MFB_C16 TS68882MFB_C20 TS68882MFB_C25 TS68882VR20 TS68882VF16 TS68882VR33 TS68882MF16 TS68882MF20 TS68882MF25 TS68882MR16 TS68882MR20 TS68882MR25 TS68882MR33 TS68882MRB_C16 TS68882MRB_C20 TS68882MRB_C25 TS68882MRB_C33 TS68882VF20 TS68882VF33 TS68882VR16 TS68882MF33
OCR Text ...mbined on the same device. CMOS structures are used where speed and low power is required, and HMOS structures are used where minimum silicon area is desired. The HCMOS technology enables the TS68882 to be very fast while consuming less pow...
Description Enhanced 32-bit FPU, 16/20/25-33 MHz
CMOS Enhanced Floating-point Co-processor

File Size 1,208.27K  /  43 Page

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    VN0300 VN0300L

Supertex, Inc
Part No. VN0300 VN0300L
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications whe...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 428.69K  /  2 Page

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    VN0550 VN0550N3

SUTEX[Supertex, Inc]
Part No. VN0550 VN0550N3
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications whe...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 461.67K  /  4 Page

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    VN0606 VN0606L

SUTEX[Supertex, Inc]
Part No. VN0606 VN0606L
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications whe...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 428.74K  /  2 Page

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    VN0808 VN0808L VN0300 VN0300L

SUTEX[Supertex, Inc]
Part No. VN0808 VN0808L VN0300 VN0300L
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications whe...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 428.73K  /  2 Page

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    VN10K VN10KN3

Supertex, Inc.
Supertex Inc
SUTEX[Supertex, Inc]
Part No. VN10K VN10KN3
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications whe...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 448.45K  /  4 Page

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    VN1206 VN1206L

SUTEX[Supertex, Inc]
Part No. VN1206 VN1206L
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications whe...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 436.20K  /  2 Page

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    VN2106 VN2106N3 VN2110 VN2110K1 VN2110ND

SUTEX[Supertex, Inc]
Part No. VN2106 VN2106N3 VN2110 VN2110K1 VN2110ND
OCR Text ...ices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where...
Description N-Channel Enhancement-Mode Vertical DMOS FETs

File Size 451.09K  /  4 Page

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For structures Found Datasheets File :: 3892    Search Time::1.937ms    
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