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For rf if Found Datasheets File :: 26870 Search Time::3.171ms
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				AD[Analog Devices]
Part No.	AD6600 AD6600AST AD6600PCB AD6600ST AD6600ST_PCB
OCR Text	rf Channels 20 MSPS on a Single Carrier 10 MSPS/Channel in Diversity Mode Total Signal Range 90+ dB 30 dB from Automatic Gain-Ranging (AGC) ...if signals. Diversity, or dual-channel mode, is limited to 10 MSPS per channel. In single-channel mo...
Description	Diversity Receiver Chipset Dual Channel, Gain-Ranging ADC with RSSI
File Size	302.17K / 24 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD7002 AD7002AS
OCR Text	...sion between the DSP and the if/rf sections in the Pan-European telephone system (GSM). The transmit path consists of an onboard digital modulator, containing all the code necessary for performing Gaussian Minimum Shift Keying (GMSK), two h...
Description	LC2MOS GSM Baseband I/O Port
File Size	442.87K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BA892-02L BA892-02V BA592 BA892
OCR Text	rf Switching Diode For band switching in TV/VTR tuners and mobile applications small capacitance 1 Very low forward resistance (typ. ...if Tj Top Tstg Value 135 120 70 Unit K/W Feb-04-2003 BA592/BA892... Electrical Characte...
Description	PIN Diodes - Bandswitching Diode for UHF-/VHF-Tuner PIN Diodes - Silicon rf switching diode for VHF band switching in TV/VTR tuners
File Size	416.51K / 4 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	BA892V-02V BA892V-02V-GS08
OCR Text	... current the forward resistance rf can be switched far below 1 , so that the Switch is closed. To open the Switch, the BA892V02V has to be d...if Tj Tstg Value 35 100 150 -55 to +150 Unit V mA C C Maximum Thermal Resistance Tamb = 25 C, un...
Description	Single Band Switching Diodes for band switching up to 3 GHz
File Size	45.83K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-04W BAS125-05W BAS125-06W BAS125W
OCR Text	...ferential forward resistance rf if = 5 mA, f = 10 kHz Semiconductor Group 2 Dec-20-1996 BAS 125W Forward current if = f (TA;TS) Package mounted on epoxy BAS 125W 100 mA if 80 70 60 50 40 30 20 10 0 0 20 40 60...
Description	Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE Preliminary data Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping application) From old datasheet system
File Size	106.14K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-04 BAS125-05 BAS125-06 Q62702-D1316 BAS125 Q62702-D1323 Q62702-D1321 Q62702-D1322
OCR Text	... Symbol min. IR - - VF - - - CT rf - - 385 530 800 - 15 410 - 900 1.1 - pF - - 1 10 mV Values typ. max. A Unit Semiconductor Group 3 BAS 125 ... Forward current if = f (VF) Forward current if = f (TS; TA) Package mount...
Description	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Circular Connector; Series:MS3106R; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
File Size	104.64K / 5 Page	View it Online	Download Datasheet

				SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-07 BAS125-07W BAS1257W Q62702-D1347
OCR Text	...ristics Diode capacitance CT rf - 16 1.1 - pF VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA, f = 10 ...if = f (V F) Forward current if = f (TA;TS) Package mounted on epoxy EHD07115 T A = Parame...
Description	Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Silicon Schottky Diode (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
File Size	31.81K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BAS40-02L BAS40-04 BAS40-07W BAS140 BAS140W BAS4 BAS40 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07
OCR Text	...ife time if = 25 mA 1V F CT rf rr - 3 10 - 5 100 pF ps is the difference between lowest and highest VF in a multiple diode component. 3 Jan-16-2004 BAS40.../BAS140W Diode capacitance CT = (VR) f = 1MHz BAS 4...
Description	Latest Silicon Discretes - Schottky Diode for switching applications Silicon Schottky Diode 硅肖特基二极
File Size	504.16K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS40-07W BAS4007W
OCR Text	...ferential forward resistance rf I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-11-01 BAS 40-07W Forward current if = f V F) Reverse current IR = f (VR) T A = 25C TA = Parame...
Description	Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
File Size	111.29K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Analog Devices, Inc.
Part No.	BAS40-T1 BAS40 Q62702A1176 BAS40-04Q62702-D980
OCR Text	...ee our WWW-Pages: Discrete and rf-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact als...
Description	DIODE SCHOTTKY SOT-23 HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) 伊雷尔硅肖特基二极管（伊雷尔和微波半导体分立一般用于高速开关电路保护的目的，二极管
File Size	74.47K / 4 Page	View it Online	Download Datasheet

For rf if Found Datasheets File :: 26870 Search Time::3.171ms
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