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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250SOT89
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| OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 2250 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure ... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
380.69K /
8 Page |
 View
it Online |
Download Datasheet
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD2250
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| OCR Text |
...The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 2250 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m... |
| Description |
1.5W POWER PHEMT
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| File Size |
180.89K /
2 Page |
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it Online |
Download Datasheet |
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Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000P100
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| OCR Text |
...100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 3000 m Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure mi... |
| Description |
2W PACKAGED POWER PHEMT
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| File Size |
179.94K /
3 Page |
View
it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000SOT89
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| OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 m Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure min... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
390.69K /
8 Page |
View
it Online |
Download Datasheet |
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Filtronic Compound Semicond...
FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD3000
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| OCR Text |
...The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 3000 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m... |
| Description |
2W POWER PHEMT
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| File Size |
181.19K /
2 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD4000AF
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| OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking... |
| Description |
4W PACKAGED POWER PHEMT
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| File Size |
705.05K /
9 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD4000AS
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| OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or ou... |
| Description |
2.5W PACKAGED POWER PHEMT
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| File Size |
195.16K /
3 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD4000V
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| OCR Text |
...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD4000V includes Source plated thru-vias, and does not require wire bonds to the Source. Typic... |
| Description |
4W POWER PHEMT
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| File Size |
239.62K /
3 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD6836P70
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| OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 360 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD6836 is also available in die f... |
| Description |
HI-FREQUENCY PACKAGED PHEMT
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| File Size |
188.76K /
3 Page |
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it Online |
Download Datasheet |
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FILTRONIC[Filtronic Compound Semiconductors]
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| Part No. |
FPD6836SOT343
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| OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 360 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m... |
| Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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| File Size |
216.21K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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