pd-drm pdf Datasheet P11 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : LBS14 3900N CZTA1411 RU6051M DTC144EM CPD04 DCR257 1N1613
	Product Description
	Full Text Search

pd-drm Datasheet PDF File

For pd-drm Found Datasheets File :: 177 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |

				Supertex, Inc.
Part No.	DN3545N8-G DN3545N3-G
OCR Text	...ipation vs. ambient temperature pd (watts) t a ( o c) 0v -1.5v 0 50 100 150 200 250 300 350 400 450 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1.0v 0246810 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 v ds = 10v t a = -55 o c t a...
Description	N-Channel Depletion-Mode Vertical DMOS FET
File Size	481.82K / 6 Page	View it Online	Download Datasheet

				Supertex, Inc. SUPERTEX INC
Part No.	TP5322K1-G TP5322N8
OCR Text	... x 25mm x 1.57mm. signifi cant pd increase possible on ceramic substate. electrical characteristics (@25c unless otherwise specified) symbol parameter min typ max units conditions bv dss drain-to-source breakdown voltage -2...
Description	P-Channel Enhancement-Mode Vertical DMOS FET
File Size	296.84K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips Semiconductors
Part No.	BUK100-50GS
OCR Text	... 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 1e-07 1e-05 1e-03 1e-01 1e+01 t / s zth / (k/w) 10 1 0.1 0.01 0 0.5 0.2 0.1 0.05 0.02 d = t p t p t t p t d d = buk100-...
Description	PowerMOS transistor TOPFET PowerMOS transistor TOPFET(功率MOS晶体管逻辑电平TOPFET)
File Size	114.39K / 11 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BUK102-50GL
OCR Text	... 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 buk102-50gl 1e-07 1e-05 1e-03 1e-01 1e+01 t / s zth / (k/w) 10 1 0.1 0.01 0.001 0 0.5 0.2 0.1 0.05 0.02 d = d = t p t ...
Description	PowerMOS transistor Logic level TOPFET
File Size	106.50K / 11 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK107-50GL
OCR Text	... 40 60 80 100 120 140 tmb / c pd% normalised power derating 120 110 100 90 80 70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40 60 80 100 120 140 tj / c a normalised rds(on) = f(tj) 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 tamb...
Description	PowerMOS transistor Logic level TOPFET
File Size	86.02K / 12 Page	View it Online	Download Datasheet

				Vishay Semiconductors
Part No.	K3012PG
OCR Text	...age (partial discharge test ) v pd = 1.6 kv ? creepage current resistance according to vde 0303/ iec 60112 comparative tracking index: cti ...drm = 250 v, dip-6 k3011p 10 ma, i ft , v drm = 250 v, dip-6 k3012p 5 ma, i ft , v drm = 250 v, d...
Description
File Size	579.75K / 8 Page	View it Online	Download Datasheet

				Philips Semiconductors 3M Company
Part No.	BUK7606-55 BUK7606-55A
OCR Text	... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c i d & i dm = ...
Description	TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET) Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
File Size	70.00K / 7 Page	View it Online	Download Datasheet

				Philips Semiconductors NXP Semiconductors N.V.
Part No.	BUK9606-55 BUK9606-55A
OCR Text	... normalised power dissipation. pd% = 100 p d /p d 25 ?c = f(t mb ) fig.2. normalised continuous drain current. id% = 100 i d /i d 25 ?c = f(t mb ); conditions: v gs 3 5 v fig.3. safe operating area. t mb = 25 ?c i d & i dm = ...
Description	TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET) TrenchMOS transistor Logic level FET TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
File Size	70.16K / 7 Page	View it Online	Download Datasheet

				Vishay Semiconductors
Part No.	VO3053-X006 VO3053-X007T
OCR Text	...charge test voltage method a, v pd = v iorm x 1.875 v pd 1669 v peak safety limiting values - maximum values allowed in the event of a failure output power p so 500 mw input current i si 250 ma case temperature t si 175 c minimum externa...
Description
File Size	125.48K / 6 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	VO2223A-X001
OCR Text	...charge test voltage method b, v pd = v iorm x 1.6 v pd 1424 v peak safety limiting values - maximum values allowed in the event of a failure case temperature t si 165 c input current i si 150 ma output power p so 2000 mw minimum external...
Description	Power Phototriac
File Size	81.79K / 6 Page	View it Online	Download Datasheet

For pd-drm Found Datasheets File :: 177 Search Time::1.453ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |