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intrinsic Datasheet PDF File

For intrinsic Found Datasheets File :: 8004 Search Time::3.328ms
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				STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF640FP IRF640
OCR Text	... HIGH dV/dt CAPABILITY VERY LOW intrinsic CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and i...
Description	N - CHANNEL 200V - 0.150ohm - 18A TO-220/TO-220FP MESH OVERLAY] MOSFET
File Size	105.91K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF640L IRF640S
OCR Text	...A --- 3.4 7.1 C di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRF...
Description	Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A) Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) HEXFET? Power MOSFET
File Size	224.71K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF640N IRF640NL IRF640NS
OCR Text	...--- 929 1394 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance Parameter RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Amb...
Description	Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A) Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
File Size	153.14K / 11 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF640S 6774
OCR Text	... HIGH dv/dt CAPABILITY VERY LOW intrinsic CAPACITANCES GATE CHARGE MINIMIZED 3 1 DESCRIPTION This power MOSFET is designed using he company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves t...
Description	N - CHANNEL 200V - 0.150ohm - 18A TO-263 MESH OVERLAY] MOSFET N - CHANNEL 200V - 0.150 - 18A TO-263 MESH OVERLAY TM MOSFET From old datasheet system
File Size	83.08K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBA90N20 IRFBA90N20D
OCR Text	...A --- 1.9 2.8 C di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFBA90N20D 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 1000 ID , Drain-to-Source Current (A) ...
Description	Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?? Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?
File Size	97.19K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR15N20D IRFU15N20D
OCR Text	... --- 610 920 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFR/U15N20D 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 I D , Drain-to-Source Current (A) ...
Description	SMPS MOSFET
File Size	180.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN9230
OCR Text	...-100 A/s -- -- 3.0 C VDD -50V intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min. Typ. Max. Units -- -...
Description	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)
File Size	87.57K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text	... 13A, di/dt 100A/s VDD 25V intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units -- -- -...
Description	200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size	123.99K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2910 L2910
OCR Text	...A --- 1.8 2.7 C di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 1.2m...
Description	RES THICK FILM POWER 10 OHM 5W HEXFET Power MOSFET
File Size	120.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text	...A --- 54 81 nC di/dt = -100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -12A, di/dt 120A/s, VDD V(BR...
Description	-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	169.26K / 8 Page	View it Online	Download Datasheet

For intrinsic Found Datasheets File :: 8004 Search Time::3.328ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |