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For if rf Found Datasheets File :: 22907 Search Time::1.531ms
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				AD[Analog Devices]
Part No.	AD6600 AD6600AST AD6600PCB AD6600ST AD6600ST_PCB
OCR Text	if Inputs, 70 MHz-250 MHz Diversity or Two Independent if Signals Separate Attenuation Paths Oversample rf Channels 20 MSPS on a Single Carrier 10 MSPS/Channel in Diversity Mode Total Signal Range 90+ dB 30 dB from Automatic Gain-Ranging (A...
Description	Diversity Receiver Chipset Dual Channel, Gain-Ranging ADC with RSSI
File Size	302.17K / 24 Page	View it Online	Download Datasheet

				AD[Analog Devices]
Part No.	AD7002 AD7002AS
OCR Text	...version between the DSP and the if/rf sections in the Pan-European telephone system (GSM). The transmit path consists of an onboard digital modulator, containing all the code necessary for performing Gaussian Minimum Shift Keying (GMSK), tw...
Description	LC2MOS GSM Baseband I/O Port
File Size	442.87K / 16 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BA892-02L BA892-02V BA592 BA892
OCR Text	...55 ... 150 Unit V mA C VR if Tj Top Tstg Value 135 120 70 Unit K/W Feb-04-2003 BA592/BA892... Electrical Characteristics ...rf rr pF 0.92 0.85 1 100 1.4 1.1 k - 0.45 0.36 120 0.7 0.5 - RL = 100 in serie...
Description	PIN Diodes - Bandswitching Diode for UHF-/VHF-Tuner PIN Diodes - Silicon rf switching diode for VHF band switching in TV/VTR tuners
File Size	416.51K / 4 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	BA892V-02V BA892V-02V-GS08
OCR Text	...st condition Sub type Symbol VR if Tj Tstg Value 35 100 150 -55 to +150 Unit V mA C C Maximum Thermal Resistance Tamb = 25 C, unless oth...rf rf rf trr 1.1 0.9 0.82 0.7 0.5 0.38 100 Min Typ. VISHAY Max 20 1.1 1.2 1.1 0.7 0.5 Unit nA V ...
Description	Single Band Switching Diodes for band switching up to 3 GHz
File Size	45.83K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-04W BAS125-05W BAS125-06W BAS125W
OCR Text	...t V mA Maximum Ratings VR if ifSM Ptot Tj Tstg 1) 1) TS 25 C Junction temperature Storage temperature Thermal Resistance Junctio...rf if = 5 mA, f = 10 kHz Semiconductor Group 2 Dec-20-1996 BAS 125W Forward curren...
Description	Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application) 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE Preliminary data Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping application) From old datasheet system
File Size	106.14K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-04 BAS125-05 BAS125-06 Q62702-D1316 BAS125 Q62702-D1323 Q62702-D1321 Q62702-D1322
OCR Text	...t Rth JA Rth JS Symbol VR if ifSM Ptot Tj Tstg Values 25 100 500 250 150 - 55 ... + 150 Unit V mA mW C 725 565 K/W 1) 2...rf - - 385 530 800 - 15 410 - 900 1.1 - pF - - 1 10 mV Values typ. max. A Unit Semiconductor...
Description	Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Circular Connector; Series:MS3106R; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No Silicon Schottky Diodes (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
File Size	104.64K / 5 Page	View it Online	Download Datasheet

				SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS125-07 BAS125-07W BAS1257W Q62702-D1347
OCR Text	......+150 Unit V mA mW C VR if I FSM Ptot Tj T stg Surge forward current (t< 100s) Total power dissipation, T S = 25 C Junction tempe...rf - 16 1.1 - pF VR = 0 V, f = 1 MHz Differential forward resistance I F = 5 mA,...
Description	Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) 2 ELEMENT, SILICON, SIGNAL DIODE Silicon Schottky Diode (For low-loss fast-recovery meter protection bias isolation and clamping applications) From old datasheet system
File Size	31.81K / 4 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BAS40-02L BAS40-04 BAS40-07W BAS140 BAS140W BAS4 BAS40 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07
OCR Text	...5W BAS40-07W 1For Symbol VR if ifSM Ptot Value 40 120 200 Unit V mA mW 250 250 250 250 250 250 250 250 Tj Top Tstg Symbol R...rf rr - 3 10 - 5 100 pF ps is the difference between lowest and highest VF in a mul...
Description	Latest Silicon Discretes - Schottky Diode for switching applications Silicon Schottky Diode 硅肖特基二极
File Size	504.16K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BAS40-07W BAS4007W
OCR Text	...55 ...+150 mW C Unit V mA VR if I FSM Ptot Tj T op T stg Maximum Ratings Junction - ambient 1) RthJA RthJS 345 275 K/W ...rf I F = 10 mA, f = 10 kHz Semiconductor Group Semiconductor Group 22 Sep-09-1998 1998-1...
Description	Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
File Size	111.29K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Analog Devices, Inc.
Part No.	BAS40-T1 BAS40 Q62702A1176 BAS40-04Q62702-D980
OCR Text	...it V mA mA mW C C C C K/W VR if ifSM Ptot Top Tstg Tsol Tj Rth(j-c) t 10 ms, duty cycle = 10% Semiconductor Group 1 Draft A0...rf-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm HiR...
Description	DIODE SCHOTTKY SOT-23 HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) 伊雷尔硅肖特基二极管（伊雷尔和微波半导体分立一般用于高速开关电路保护的目的，二极管
File Size	74.47K / 4 Page	View it Online	Download Datasheet

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