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For gem Found Datasheets File :: 670 Search Time::4.89ms
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				Infineon
Part No.	SPLBG94 SPLBG81
OCR Text	...diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-norm 60825-1 behandelt werden. features ? unmounted monolithic linear array ? high-efficiency movpe-grown quantum-well structure ? highly-reliable strained-layer i...
Description	Unmounted Laser Bar
File Size	57.07K / 3 Page	View it Online	Download Datasheet

				Infineon
Part No.	SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SPLBX81
OCR Text	...diese bauteile enthalten, mssen gem?? den sicherheits- richtlinien der iec-norm 60825-1 behandelt werden. features unmounted monolithic linear array high-efficiency movpe-grown quantum-well structure highly-reliable strained-layer i...
Description	Unmounted Laser Bar 40 W, 980 nm Unmounted Laser Bar 20 W, 808 nm Unmounted Laser Bar 100 W, qcw Unmounted Laser Bar 30 W, 830 nm Unmounted Laser Bar 30 W, 980 nm Unmounted Laser Bar 30 W, 940 nm Unmounted Laser Bar 30 W, 808 nm
File Size	104.84K / 3 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	CT60AM-18B
OCR Text	...v v a a a w c c v ces v ges v gem i c i cm i e p c t j t stg outline drawing dimensions in mm mitsubishi insulated gate bipolar transistor ct60am-18b resonant inverter use application microwave ovens, electromagnetic cooking devices, rice...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE
File Size	46.91K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	HGT1S5N120BNDS HGT1S5N120BNDS9A
OCR Text	.... . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 30a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . ...
Description	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 10A I(C) \| TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
File Size	153.21K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	1SMC8.0AT3 1SMC6.5AT3 1SMC26AT3 1SMC7.0AT3
OCR Text	...g 1smc16at3, g 1smc17at3, g gek gem gep ger 14 15 16 17 5 5 5 5 15.6 16.7 17.8 18.9 16.4 17.6 18.75 19.9 17.2 18.5 19.7 20.9 1 1 1 1 23.2 24.4 26 27.6 64.7 61.5 57.7 53.3 1smc18at3, g 1smc20at3, g 1smc22at3, g 1smc24at3, g get gev gex gez 1...
Description	1500 Watt Peak Power,Plastic Surface Mount,Zener Transient Voltage Suppressor(塑料表贴封装，峰值功500W，变位电.5V，齐纳瞬变电压抑制器) 1500 Watt Peak Power,Plastic Surface Mount,Zener Transient Voltage Suppressor(塑料表贴封装，峰值功500W，变位电6.5V，齐纳瞬变电压抑制器) 1500 Watt Peak Power,Plastic Surface Mount,Zener Transient Voltage Suppressor(塑料表贴封装，峰值功500W，变位电6V，齐纳瞬变电压抑制器) 1500 Watt Peak Power,Plastic Surface Mount,Zener Transient Voltage Suppressor(塑料表贴封装，峰值功500W，变位电7.0V，齐纳瞬变电压抑制器) 1500 Watt Peak Power,Plastic Surface Mount,Zener Transient Voltage Suppressor(塑料表贴封装，峰值功500W，变位电.0V，齐纳瞬变电压抑制器) 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
File Size	68.88K / 7 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGE200N60B04 IXGE200N60B
OCR Text	... 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 160 a i l terminal current limit(rms) 100 a i c90 t c = 90 c96a i cm t c = 25 c, 1 ms 400 a ssoa v ge = 15 v, t vj = 125 c, r g = 2.4 ? i cm = 200 a (rbsoa) clamp...
Description	IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HiPerFAST IGBT
File Size	518.58K / 2 Page	View it Online	Download Datasheet

				IXYS, Corp. IXYS Corporation
Part No.	IXGT31N60D1 IXGH31N60D1
OCR Text	...600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c90 t c = 90 c31a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 62 a (rbsoa) clamped inductive load, l = 100 h @ 0.8 v...
Description	Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD Ultra-Low V IGBT with Diode
File Size	52.67K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	11N120CN
OCR Text	.... . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t j = 150 o c (figure 2) . . . . . . . . . . . . . . . . . . . . . . . ssoa 55a at 1200v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . ...
Description	Search --To HGTG11N120CN
File Size	170.49K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	ISL9V5036S3S ISL9V5036P3
OCR Text	...t t c = 110c, see fig 9 31 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25c 200 w power dissipation derating t c > 25c 1.33 w/c t j operating junction temperature range -40 to 175 c t stg storage junc...
Description	EcoSPARK TM 500mJ, 360V, N-Channel Ignition IGBT
File Size	154.77K / 8 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXER20N120 IXER20N120D1
OCR Text	...n entsprechen dem typ to-247 ad gem?? jedec au?er schraubloch und l max . this drawing will meet all dimensions requiarement of jedec outline to-247 ad except screw hole and except l max . p h a s e - o u t ? 2008 ixys all rights...
Description	NPT3 IGBT in ISOPLUS247
File Size	205.94K / 4 Page	View it Online	Download Datasheet

For gem Found Datasheets File :: 670 Search Time::4.89ms
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