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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... Voltage Single Pulse Avalanche energy Avalanche Current*9.0 Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 17 12 60 3.8 79 0.53 20 150...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

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    RJK0349DSP-00-J0 RJK0349DSP

Renesas Electronics Corporation
Part No. RJK0349DSP-00-J0 RJK0349DSP
OCR Text ...ent Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg Note1 Ratings ...
Description Silicon N Channel Power MOS FET Power Switching

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ... IAR EAR Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Typ. --- --- --- Max. 510 8.0 13 Units mJ A mJ Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted, st...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... IAR EAR Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Typ. --- --- --- Max. 510 8.0 13 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surfa...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. ...
Description 500V N-Channel MOSFET

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... Voltage Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 8.0 5.1 28 3.1 125 1.0 30 510 8...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    FDA28N50

Fairchild Semiconductor
Part No. FDA28N50
OCR Text ...performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-3PN S MOSFET Maximu...
Description N-Channel MOSFET 500V, 28A, 0.155Ω
N-Channel MOSFET 500V, 28A, 0.155ヘ

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text ...nsconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperat...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...TA = 70C Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

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