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ST Microelectronics
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| Part No. |
STP40N03L-20
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| OCR Text |
...S1 S2 LD LG LS RDRAIN RGATE CGD cgs ALFA RGN Parameter (V14_16<0) (See Power Mosfet Model Subcircuit) (V16_11<0) (See Power Mosfet Model Subcircuit) Drain Inductance Gate Inductance Source Inductance Drain Resistance Gate Resistance Gate Dr... |
| Description |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
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| File Size |
107.65K /
7 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN473
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| OCR Text |
...nstant gate-source capacitance, cgs, and a twoelement gate-drain capacitance, CGD. Figure 2 shows an experimental CV diagram and its simulation obtained by the model described above. When the drain-gate voltage is positive, i.e. V(a) - V(b)... |
| Description |
A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL
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| File Size |
42.97K /
7 Page |
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it Online |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4124-EPU TGF4124
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| OCR Text |
....53233 Rgs = 4086 Ri = 0.030 cgs = 26.9096 pF Cdg = 0.99024 pF Rdg = 102026 Rs = 0.04943 Ls = 0.00808 nH Rds = 5.39715 Cds = 4.30372 pF Rd = 0.19448 Ld = 0.00965 nH VCCS Parameters M = 2.668 S A=0 R1 = 1E19 R2 = 1E19 F=0 T = 4.50 pS ... |
| Description |
24 mm Discrete HFET
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| File Size |
153.35K /
9 Page |
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it Online |
Download Datasheet |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4118-EPU TGF4118
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| OCR Text |
...42115 Rgs = 5447 Ri = .05082 cgs = 18.82602 pF Cdg = 1.03674 pF Rdg = 13600 Rs = 0.06265 Ls = 0.00869 nH Rds = 6.40925 Cds = 3.72019 pF Rd = 0.01831 Ld = 0.00195 nH VCCS Parameters M = 2.04398 S A=0 R1 = 1E19 R2 = 1E19 F=0 T = 4.5116... |
| Description |
18 mm Discrete HFET
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| File Size |
151.94K /
9 Page |
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it Online |
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TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF4112-EPU TGF4112
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| OCR Text |
...41613 Rgs = 8170 Ri = 0.0790 cgs = 13.5015 pF Cdg = 0.48075 pF Rdg = 20400 Rs = 0.08699 Ls = 0.01055 nH Rds = 12.324 Cds = 2.2848 pF Rd = 0.1968 Ld = 0.0067 nH VCCS Parameters M = 1.275 S A=0 R1 = 1E19 R2 = 1E19 F=0 T = 4.51 pS Cdg
... |
| Description |
12 mm Discrete HFET
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| File Size |
153.36K /
9 Page |
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it Online |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2022-60
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| OCR Text |
...mm Unit pHEMT cell
Rdg Lg Gate cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2022-60
vi
-
Ls
Rp, Cp
8QLW S+(07 FHOO 5HIHUHQFH 3ODQH
Rs
Source Gate Drain
UPC
Source Source
Source
UPC = 0.75mm Unit pHEMT Cell... |
| Description |
DC - 20 GHz Discrete power pHEMT
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| File Size |
141.48K /
8 Page |
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it Online |
Download Datasheet |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2022-48
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| OCR Text |
...mm Unit pHEMT cell
Rdg Lg Gate cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2022-48
vi
-
Ls
Rp, Cp
8QLW S+(07 FHOO 5HIHUHQFH 3ODQH
Rs
Source Gate Drain
UPC
Source Source
Source
UPC = 0.6mm Unit pHEMT Cell
... |
| Description |
DC - 20 GHz Discrete power pHEMT
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| File Size |
137.79K /
8 Page |
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it Online |
Download Datasheet |
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