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800v-4.6-1.9a- Datasheet PDF File

For 800v-4.6-1.9a- Found Datasheets File :: 144 Search Time::1.969ms
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				International Rectifier
Part No.	T1061
OCR Text	... bridge rectifiers are rated at 800V. The inverter section uses 600V, short circuit rated, ultrafast IGBTs and ultrafast freewheeling diodes...4.4A rms nominal full load power 6.6A rms 150% overload for 1 minute 425V maximum 7.9A 50kOhms 5% 3....
Description	Search --To IRPT1061
File Size	268.26K / 12 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics
Part No.	TPA-SERIES
OCR Text	...t IBO measure Transformer 220V/800V 5A D.U.T V BO measure TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional de...4: On-state current versus on-state voltage (typical values). IT(A) VR(V) VT(V) Fig. 5: ...
Description	TRISIL
File Size	53.02K / 5 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electronic Co.,Ltd.
Part No.	MJF18008
OCR Text	...=RatedVCES; VEB=0 TC=125ae VCES=800V ICEO IEBO hFE-1 hFE-2 hFE-3 hFE-4 fT COB Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitan...
Description	Silicon NPN Power Transistors
File Size	38.38K / 3 Page	View it Online	Download Datasheet

				JILIN SINO-MICROELECTRONICS CO., LTD.
Part No.	3DD5287-O-A-N-D
OCR Text	...B=0 IC=1mA,IE=0 IE=1mA,IC=0 VCB=800V, IE=0 VEB=7V, IC=0 VCE = 4 V, IC = 1.8 A IC=1.8A, IB=0.36A IC=1.8A, IB=0.36A IC=1.8A,2IB1=-IB2=0.9A fH=15.75kHz VCE=12V, IC=0.35A xiO Min Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO HFE VCE(sat) ...
Description	CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY
File Size	143.01K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STD2NB80T4 STD2NB80-1
OCR Text	800V - 4.6 - 1.9A - IPAK/DPAK PowerMESHTM MOSFET TYPE STD2NB80 s s s s s s V DSS 800 V R DS(on) < 6.5 ID 1.9 A TYPICAL RDS(on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GA...
Description	N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET
File Size	282.47K / 9 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APT18M80B09
OCR Text	...ak apt18m80b apt18m80s 800v, 19a, 0.53 max apt18m80b apt18m80s power mos 8 ? is a high speed, high voltage n-channel switch-mode...4 c o(cr) is de? ned as a ? xed capacitance with the same stored charge as c oss with v ds = ...
Description	N-Channel MOSFET
File Size	112.06K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STW11NB80
OCR Text	800v - 0.65 w - 11a - t0-247 powermesh ? mosfet n typical r ds(on) = 0.65 w n extremely high dv/dt capability n 30v gate to source voltage ...4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ...
Description	N-CHANNEL PowerMESH MOSFET
File Size	107.41K / 8 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTM100H45STG
OCR Text	...rain current v gs = 0v,v ds = 800v t j = 125c 500 a r ds(on) drain ? source on resistance v gs = 10v, i d = 9a 450 540 m ?...4 v f diode forward voltage i f = 30a t j = 125c 0.9 v t j = 25c 24 t rr rev...
Description	Full bridge Series & parallel diodes MOSFET Power Module
File Size	287.40K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	RF1S4N100SM RFP4N100
OCR Text	...00v, v gs = 0v --25 a v ds = 800v, v gs = 0v, t c = 150 o c - - 100 a gate to source leakage current i gss v gs = 20v - - 100 na d...4.3a - - 1.8 v reverse recovery time t rr i sd = 3.9a, di sd /dt = 100a/ s - - 1000 ns notes: 2. p...
Description	4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
File Size	94.50K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	ARF1510
OCR Text	...voltage drain current (v ds = 800v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 4.5a) rms voltage (60hz sinewave from terminals to mounting surface for 1 ...
Description	RF Power Transistors: INDUSTRIAL, SCIENTIFIC, MEDICAL (ISM) & HF COMMUNICATIONS
File Size	79.14K / 2 Page	View it Online	Download Datasheet

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