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Microsemi, Corp.
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Part No. |
APT24M120B2
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OCR Text |
... 12a, di/dt 1000a/s, v dd = 800v, t j = 125c test conditions v ds = 50v , i d = 12a v gs = 0v , v ds = 25v f = 1mhz v gs ...us and foreign patents pending. all rig hts reserved. to-264 (l) package outline t-max? (b2) packag... |
Description |
N-Channel MOSFET 24 A, 1200 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET
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File Size |
116.68K /
4 Page |
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![APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG](Maker_logo/advanced_power_technology.GIF)
Microsemi, Corp. Advanced Power Technology
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Part No. |
APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG
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OCR Text |
...F = 60A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 2...us and Foreign patents pending. All Rights Reserved.
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Description |
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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File Size |
128.15K /
4 Page |
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International Rectifier, Corp.
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Part No. |
IRG4PH50KDPBF
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OCR Text |
...e ? 140 300 i c = 24a, v cc = 800v t f fall time ? 200 300 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 3.83 ? energy losses in...us pulse width ge i = a 48 c i = a 24 c i = a 12 c
irg4ph50kdpbf ww... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管,超快软恢复二极管
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File Size |
674.13K /
11 Page |
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Winsem Technology
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Part No. |
WTBV53DM WTBV53DMR
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OCR Text |
... bv ceo : 400v ? bv cbo : 800v ? i c : 2.5a ...us storage time t stg 3 6 us fall time t f 0.2 0.7 us ... |
Description |
POWER TRANSISTOR
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File Size |
417.98K /
5 Page |
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it Online |
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Price and Availability
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