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SMB20 AHC1G 1030C COVER FN1A4Z S5U2596M 104KA P4SMAJ58
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  800v us Datasheet PDF File

For 800v us Found Datasheets File :: 795    Search Time::1.437ms    
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    IRG4PH50KD IRG4PH50KD-E

IRF[International Rectifier]
Part No. IRG4PH50KD IRG4PH50KD-E
OCR Text ...TJ = 25C ns 300 IC = 24A, VCC = 800v 300 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 7.9 See Fig. 9...us PULSE WIDTH GE Maximum DC Collector Current(A) 40 3.5 IC = 48A 30 3.0 IC ...
Description 45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

File Size 221.27K  /  10 Page

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    Microsemi, Corp.
Part No. APT24M120B2
OCR Text ... 12a, di/dt 1000a/s, v dd = 800v, t j = 125c test conditions v ds = 50v , i d = 12a v gs = 0v , v ds = 25v f = 1mhz v gs ...us and foreign patents pending. all rig hts reserved. to-264 (l) package outline t-max? (b2) packag...
Description N-Channel MOSFET 24 A, 1200 V, 0.63 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 116.68K  /  4 Page

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    APT14M120B09 APT14M120S

Microsemi Corporation
Part No. APT14M120B09 APT14M120S
OCR Text ... 7a, di/dt 1000a/s, v dd = 800v, t j = 125c test conditions v ds = 50v , i d = 7a v gs = 0v , v ds = 25v f = 1mhz v gs =...us and foreign patents pending. all rig hts reserved. d 3 pak package outline to-247 (b) package ou...
Description N-Channel MOSFET 1200V, 14A, 1.10Ω Max

File Size 113.57K  /  4 Page

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    APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG

Microsemi, Corp.
Advanced Power Technology
Part No. APT60DQ120B APT60DQ120BG APT60DQ120S APT60DQ120SG
OCR Text ...F = 60A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 60A, diF/dt = -200A/s VR = 800v, TC = 2...us and Foreign patents pending. All Rights Reserved. ...
Description Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 1200; trr (nsec): 30; VF (V): 2.8; Qrr (nC): 2800; 60 A, 1200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 128.15K  /  4 Page

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    IRG4ZH50KD

IRF[International Rectifier]
Part No. IRG4ZH50KD
OCR Text ...TJ = 25C ns 230 IC = 29A, VCC = 800v 290 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 6.5 see figure...us PULSE WIDTH IC = 58 A Maximum DC Collector Current(A) 40 30 3.0 IC = 29 A 20 ...
Description 600V Copack IGBT in a SMD-10 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 241.66K  /  10 Page

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    IRG4ZH70UD

IRF[International Rectifier]
Part No. IRG4ZH70UD
OCR Text ... TJ = 25C -- ns IC = 42A, VCC = 800v 400 VGE = 15V, RG = 5.0 280 Energy losses include "tail" and -- diode reverse recovery. -- mJ see figur...us PULSE WIDTH Maximum DC Collector Current (A) 3.0 IC = 84 A IC = 42 A 40 2.0 IC ...
Description 1200V Copack IGBT in a SMD-10 package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 231.41K  /  10 Page

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    IRG4ZH71KD

IRF[International Rectifier]
Part No. IRG4ZH71KD
OCR Text ...TJ = 25C ns 320 IC = 42A, VCC = 800v 330 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 9.8 See Fig. 9...us PULSE WIDTH 4.0 IC = 84 A 3.0 40 IC = 42 A IC = 21 A 20 2.0 0 25 50 75 100 ...
Description Surface Mountable Short Circuit Rated UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)

File Size 229.94K  /  10 Page

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    International Rectifier, Corp.
Part No. IRG4PH50KDPBF
OCR Text ...e ? 140 300 i c = 24a, v cc = 800v t f fall time ? 200 300 v ge = 15v, r g = 5.0 ? e on turn-on switching loss ? 3.83 ? energy losses in...us pulse width ge i = a 48 c i = a 24 c i = a 12 c irg4ph50kdpbf ww...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管,超快软恢复二极管

File Size 674.13K  /  11 Page

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    APT40DQ120BCT APT40DQ120BCTG

Advanced Power Technology
Part No. APT40DQ120BCT APT40DQ120BCTG
OCR Text ...F = 40A, diF/dt = -1000A/s VR = 800v, TC = 125C IF = 40A, diF/dt = -200A/s VR = 800v, TC = 125C IF = 40A, diF/dt = -200A/s VR = 800v, TC = 2...us and Foreign patents pending. All Rights Reserved. ...
Description ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

File Size 128.23K  /  4 Page

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    Winsem Technology
Part No. WTBV53DM WTBV53DMR
OCR Text ... bv ceo : 400v ? bv cbo : 800v ? i c : 2.5a ...us storage time t stg 3 6 us fall time t f 0.2 0.7 us ...
Description POWER TRANSISTOR

File Size 417.98K  /  5 Page

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