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  5.9-6.4ghz Datasheet PDF File

For 5.9-6.4ghz Found Datasheets File :: 1073    Search Time::1.687ms    
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    TQP777002

TRIQUINT[TriQuint Semiconductor]
Part No. TQP777002
OCR Text ... Shutdown Mode EVM < 3.0% @ +18.5 dBm Linear Output Power 802.11g modulation +22 dBm Linear Output Power 802.11b modulation Integrated input...9 N/C Product Description The TQP777002 is a high performance, high linearity, medium-power ampl...
Description 2.4 GHz ISM Band InGaP HBT Matched Power Amplifier
2.4GHz ISM Band InGaP HBT Matched Power Amplifier

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    FLC157XP

Eudyna Devices Inc
Part No. FLC157XP
OCR Text ... 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability Drain Drain DESCRIPTION The FLC157XP chip is a power GaAs FET that is ...9.6 and -1.0 mA respectively with gate resistance of 200. 3. The operating channel temperature (Tch)...
Description GaAs FET & HEMT Chips

File Size 55.15K  /  4 Page

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    Zarlink
Part No. SP5768
OCR Text ... CLOCK ENABLE DATA INTERFACE 5 BIT LATCH & PORT/ TEST MODE INTERFACE PORT P0/OP PORT P1/OC PORT P2 PORT P3 Figure 1 - SP57...9,10 240 2 131071 320 See Table 2 See Note 2 Vport = 0.7V Vport = Vcc 2 10 mA A Refer...
Description 3.0GHz Low Phase Noise Frequency Synthesiser

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    CFH800

Infineon Technologies A...
ETC
INFINEON[Infineon Technologies AG]
Part No. CFH800
OCR Text ...ol VDS VDG VGS ID TCh Tstg Ptot 5.5 6.5 -2.0 160 150 -65...+150 350 Unit V V V mA C C mW RthChS 198 K/W Infineon Technologies...9 0.6178 -32.7 0.4 0.8861 -44.6 10.2628 146.9 0.0607 64.2 0.594 -42.2 0.5 0.8513 -54.8 9.74 139.7 0....
Description Typical Common Source S - Parameters

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    United Monolithic Semic...
UMS[United Monolithic Semiconductors]
Part No. CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text ...istics Tamb = 25C, Vc=9V, Vctr=5.5V, Pulse width=80s , Duty cycle = 30% Symbol F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P...9.4GHz) Linear gain (9.4 to 10.4GHz) Linear gain variation versus temperature Input Return Loss Outp...
Description X-band GaInP HBT High Power Amplifier

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    Maxim
Part No. MAX2821EVKIT MAX2820EVKIT
OCR Text ...rs, C case AVX TAJC106K016 82pF 5% capacitor (0402) Murata GRP1555C1H820J 100pF 5% capacitor (0402) Murata GRP1555C1H101J 2000pF 10% capacit...9 1% resistors (0402) 12.1k 1% resistor (0402) 2.43k 1% resistor (0402) 1.82k 1% resistor (0402) 27....
Description Evaluation Kits for the MAX2820/MAX2821

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    RF2968

RF Micro Devices
Part No. RF2968
OCR Text ...nsed to RF Micro Devices, Inc. 5.00 0.10 4.75 0.10 -A-B0.40 0.10 0.20 * Cordless Phones * Battery-Powered Portable Devices 4.75 0...9 IREF 10 VCC5 11 D1 12 BPKTCTL 13 BDATA1 14 RECCLK 15 RECDATA 16 BXTLEN Functional Block Diagram...
Description Communication Miscellaneous - Datasheet Reference

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    MAXIM[Maxim Integrated Products]
Part No. MAX2645EVKIT MAX2645_1 MAX2645 MAX26451
OCR Text ...02) Murata GRM36X7R221K050 47pF 5% ceramic capacitor (0402) Murata GRM36COG470J050 0.75pF 0.1pF ceramic capacitor (0402) Murata GRM36COGR75B...9 MAX2645 RFIN C1 3 RFIN SHDN 8 R2 1k C8 0.1F 1 SHDN 0 JU2 Z1 4 GND GND 7 RA...
Description Evaluation Kit for the MAX2645
From old datasheet system

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    Maxim
Part No. MAX2645
OCR Text ...nt in Shutdown Mode o +3.0V to +5.5V Single-Supply Operation o 10-Pin MAX-EP Package (5.0mm x 3.0mm) General Description The MAX2645 is ...9.7 14.9/-10.7 15.2/-9.7 NF (dB) 2.3/15.5 2.6/16 2.6/16 IIP3 (dBm) +4/+13 +10/+15.5 +11.8/+16....
Description 3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver
From old datasheet system

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V5964A C455964A1
OCR Text ...TOR <GaAs FET> MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET OUTLINE DRAWING Unit:millimeters (inches) DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5....
Description 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET

File Size 39.86K  /  2 Page

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