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  30.0-46.0 Datasheet PDF File

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ...I D , Drain Current (A) VGS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case T...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...t Typ. --- --- Max. 460 30 Units mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Dio...0.88 --- 0.82 --- 50 --- 61 --- 48 --- 65 Conditions MOSFET symbol showing the G integral reverse...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 ...0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VD...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 ...0 90 7.2 Min 30 17 25 Typ Max Units V m V A mA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VD...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...C IDM PD Symbol VDS VGS ID Max. 30 20 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 ...0 20 2.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...C IDM PD Symbol VDS VGS ID Max. 30 20 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 ...0 50 6.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... PD Symbol VDS VGS ID IRF7807 V 30 20 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 C A W A Units V 3/1/01 IRF7807V Electrical Characteristics...0 20 100 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ... PD Symbol VDS VGS ID IRF7811AV 30 20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50 C A W A Units V www.irf.com 1 12/13/00 IRF7811AV Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resista...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ... Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge through are on page 10 Notes www.irf.com 1...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...ew Max. 8.0 5.1 32 125 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l l Two Transistor Forward Haft Bridge Full Bridge 1 7/7/99 www.irf.com IRF840...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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