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    BYV32EB-200

NXP Semiconductors
Part No. BYV32EB-200
OCR Text 200 Dual rugged ultrafast rectifier diode, 20 A, 200 V Rev. 04 -- 2 March 2009 Product data sheet 1. Product profile 1.1 General descr...Pin 1 2 3 mb Pinning information Symbol A1 K A2 K Description anode 1 cathode anode 2 mounting base;...
Description Dual rugged ultrafast rectifier diode, 20 A, 200 V

File Size 124.93K  /  9 Page

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    75KTA062134-200

Integrated Device Technology
Part No. 75KTA062134-200
OCR Text 200 Platform Introduction IDT provides proven, industry-leading network search engines (NSEs) and a comprehensive suite of software that e...pin Mictor connector on the Intel IXDP2400 development platform. IDT75KTA062134-200 Block Diagram...
Description Network Search Engine Development Board for the Intel? IXDP2400 Development Platform
Network Search Engine Development Board for the Intel㈢ IXDP2400 Development Platform

File Size 64.89K  /  2 Page

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    SILICON STORAGE TECHNOLOGY INC
Part No. SST29VE020-200-4C-NH SST29LE020-200-4I-EH SST29VE020-200-4C-EH SST29VE020-200-4I-EH SST29LE020-200-4C-NHE SST29LE020-200-4C-EH SST29LE020-200-4C-EHE SST29LE020-200-4I-EHE SST29EE020-120-4I-NH SST29EE020-120-4C-EH SST29VE020-200-4I-NH SST29LE020-200-4I-NH SST29LE020-200-4I-NHE SST29VE020-200-4I-EHE
OCR Text ...n: 120 ns ? 3.0-3.6v operation: 200 ns ? 2.7-3.6v operation: 200 ns  latched address and data  automatic write timing ? internal v pp ge...pin pdip product description the sst29ee/le/ve020 are 256k x8 cmos page-write eeprom manufactured wi...
Description 256K X 8 FLASH 2.7V PROM, 200 ns, PDSO32

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    NXP Semiconductors N.V.
Part No. BYV79E-200
OCR Text ...forward volt drop v r = 150 v/ 200 v ? fast switching ? soft recovery characteristic v f 0.9 v ? reverse surge capability ? high thermal ...pin description intended for use as output rectifiers in high frequency switched mode 1 cathode powe...
Description Ultrafast power diode BYV79E-200<SOD59 (TO-220AC)|<<http://www.nxp.com/packages/SOD59.html<1<week 1, 2005,;

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    SILICON STORAGE TECHNOLOGY INC
Part No. SST29LE020-200-4I-EH
OCR Text ...n: 120 ns ? 3.0-3.6v operation: 200 ns ? 2.7-3.6v operation: 200 ns  latched address and data  automatic write timing ? internal v pp ge...pin pdip product description the sst29ee/le/ve020 are 256k x8 cmos page-write eeprom manufactured wi...
Description 256K X 8 EEPROM 3V, 200 ns, PDSO32

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    TC-200-DFF-416B-625.00MHZ TC-200 TC-200-CFC-416A-311.04MHZ TC-200-CFC-416A-622.08MHZ TC-200-CFC-416A-625.00MHZ TC-200-CF

Electronic Theatre Controls, Inc.
ETC[ETC]
Vectron International, Inc
Part No. TC-200-DFF-416B-625.00MHZ TC-200 TC-200-CFC-416A-311.04MHZ TC-200-CFC-416A-622.08MHZ TC-200-CFC-416A-625.00MHZ TC-200-CFC-416B-311.04MHZ TC-200-CFC-416B-622.08MHZ TC-200-CFC-416B-625.00MHZ TC-200-CFF-416A-311.04MHZ TC-200-CFF-416A-622.08MHZ TC-200-CFF-416A-625.00MHZ TC-200-CFF-416A-644.5313M TC-200-CFF-416B-311.04MHZ TC-200-CFF-416B-622.08MHZ TC-200-CFF-416B-625.00MHZ TC-200-DFC-416A-311.04MHZ TC-200-DFC-416A-622.08MHZ TC-200-DFC-416A-625.00MHZ TC-200-DFC-416B-311.04MHZ TC-200-DFC-416B-622.08MHZ TC-200-DFC-416B-625.00MHZ TC-200-DFF-416A-622.08MHZ TC-200-DFF-416A-625.00MHZ TC-200-DFF-416B-311.04MHZ TC-200-DFF-416B-622.08MHZ TC-200-DFF-416A-311.04MHZ
OCR Text 200 Description: Vectron International has introduced a series of low jitter complementary PECL TCXO's for use in SONET Minimum Clock (SMC...Pin Out Information Pin Function 1 2 3 4 5 6 7 8 9 10 Electrical Frequency Adjust; 0 to Vcc. or No ...
Description XTAL CER SMT 6X3.5 2PAD
Temperature Compensated Crystal Oscillators

File Size 108.38K  /  2 Page

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    NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK444-200 BUK444-200A BUK444-200B BUK444
OCR Text ... on-state resistance MAX. -200A 200 5.3 25 0.4 MAX. -200B 200 4.7 25 0.5 UNIT V A W PINNING - SOT186 PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 123 s LIMITING VALUES Li...
Description PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
   PowerMOS transistor

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