...th 2SC0000'>1890/A
Outline
TO-92 (0000'>1)
0000'>1. Emitter 2. Collector 3. Base 3 2 0000'>1
2SA893, 2SA893A
Absolute Maximum Ratings (Ta = 25C)
Item Co...0.5 -- 800 Min Typ Max -- -- -0.5 800 -0.75 V -0.5 -- -- 0000'>10 V MHz pF dB Unit V A A Test conditions I...
...mb=25) TO-92L TRANSISTOR (PNP)
0000'>1. EMITTER
2. COLLECTOR
3. BASE
Collector current : -0.7 A ICM Collector-base voltage V(BR)CBO : -80 V Operating and storage junction temperature range TJ, Tstg: -55 to +0000'>150 ELECTRICAL CHARACTERISTIC...
...PC Tj Tstg Rating -0000'>120 -0000'>120 -7 -0000'>1.5 25 0000'>150 -50~0000'>150 Unit V V V A W
ELECTRICAL CHARACTERISTICS (TA=25)
Characteristic Collector Cutoff...0 VEB= -7V , IC=0 VCE= -5V , IC=-0.3A IC=-2A , IB=-0.2A VCE=- 5V , IC=-0.5A Min Typ Max 0000'>100 0000'>100 0000'>150 ...
Description
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
...=-0.5A Min Typ Max -0000'>10 -0000'>10 340 -0000'>1.5 0000'>100 Unit
A A
70
V MHZ
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2340000'>1 9276 Fax:(852)2797 80000'>153 E-mail: wsccltd@hkstar.com
Description
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
0000'>1
Unit: mm
3.20.2
Features
* High collector-base voltage (Emitter open) VCBO * High collector-emitter voltage (Base open) VCEO * La...0.750.0000'>1 4.60.2
0.50.0000'>0000'>1 0.50.0000'>1 2.30.2 0000'>1.760.0000'>1
mA mA W C C
Electrical Characteristics Ta = 25...
Description
2SB0000'>100000'>10000'>1 Silicon PNP triple diffusion planar type
...
Outline
TO-0000'>126 MOD
2
3 0000'>1. Emitter 2. Collector 3. Base ID 5 k (Typ) 0000'>1 k (Typ) 0000'>1
0000'>1
2
3
2SB0000'>100000'>12(K)
Absolute Maximum Rati...0 20 0000'>150 -55 to +0000'>150 0000'>1.5
Unit V V V A A W C C A
Electrical Characteristics (Ta = 25C)
Item Sy...