|
|
|
NXP[NXP Semiconductors]
|
Part No. |
BAP70-03
|
OCR Text |
...iode capacitance VR = 50 V VR = 0 V; f = 1 MHz VR = 1 V; f = 1 MHz VR = 5 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF =...03
MAX. 1.1 100 - - - 250 100 50 7 1.9 - V
UNIT nA fF fF fF fF s
LS
series inductanc... |
Description |
Silicon PIN diode
|
File Size |
217.11K /
7 Page |
View
it Online |
Download Datasheet |
|
|
|
Mitsubishi Electric Corporation
|
Part No. |
FS50UMJ-03
|
OCR Text |
... 200 45 C55 ~ +150 C55 ~ +150 2.0 v gs = 0v v ds = 0v l = 30 m h typical value drain-source voltage gate-source voltage drain current drai...03 high-speed switching use v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 30 1.0 ... |
Description |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
File Size |
47.04K /
4 Page |
View
it Online |
Download Datasheet |
|
|
|
Mitsubishi Electric Corporation
|
Part No. |
FS70UMJ-03
|
OCR Text |
...80 70 C 55 ~ +150 C 55 ~ +150 2.0 v gs = 0v v ds = 0v l = 30 h typical value drain-source voltage gate-source voltage drain current drain...03 high-speed switching use v a ma v m ? m ? v s pf pf pf ns ns ns ns v c/w ns 30 1.0 ... |
Description |
Power MOSFETs: FS Series, Low Voltage, 30V for High-Speed Switching Use
|
File Size |
65.02K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|