... N*m)
Units
V A
s V VRMS w
C
Thermal Resistance
Parameter
RJC (IGBT) RJC (DIODE) RCS (MODULE) wt Junction-to-Case, each IGBT,...3.0 --- ---
Units
C/w g (oz)
7/18/97
CPV364M4K
Electrical Characteristics @ TJ = 25C (unl...
....008 0.016 135
Units
o
C/w
o
C/w C/w C/w C/w
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
3/8
www.dynexsemi.com
DCR806SG
DYNAMIC CHARACTERI...
....008 0.016 135
Units
o
C/w
o
C/w C/w C/w C/w
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
3/8
www.dynexsemi.com
DCR818SG
DYNAMIC CHARACTERI...
....008 0.016 185
Units
o
C/w
o
C/w C/w C/w C/w
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
3/7
www.dynexsemi.com
DS1104SG
CHARACTERISTICS
S...
Description
Rectifier Diode 1849 A, 2900 V, SILICON, RECTIFIER DIODE
....008 0.016 160
Units
o
C/w
o
C/w C/w C/w C/w
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C
C C
o
kN
3/7
www.dynexsemi.com
DS1107SG
CHARACTERISTICS
S...
....008 0.016 160
Units
o
C/w
o
C/w C/w C/w C/w
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C C C
o
kN
3/7
www.dynexsemi.com
DS1109SG
CHARACTERISTICS
Symb...
....008 0.016 160
Units
o
C/w
o
C/w C/w C/w C/w
o
o
Double side Single side
o
Rth(c-h)
Thermal resistance - case to heatsink
o
C C C
o
kN
3/7
www.dynexsemi.com
DS1112SG
CHARACTERISTICS
Symb...
... 7FB 7FA 7F9 7F8 X X BF X X OSC w R X X
10 Year X X 10 MINUTES 10 SECONDS 10 CENTURY 10 Mo 10 Date X X 10 HOUR
YEAR MONTH DATE DAY HOU...3 of 12
DS1742
address inputs are changed while CE , and OE remain valid, output data will rem...