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Rohm CO.,LTD.
ROHM[Rohm]
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| Part No. |
1SR139-600 1SR139-400
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| OCR Text |
...URRENT : IO (A)
1.0
E IV ST SI RE
REVERSE CURRENT : IR (A)
1 100m 10m
=12 5C 75 C 25 C
0.8
1
Ta=100C
D AN
0.6
P CA
D IN
Ta=75C
IT AC IV
UC
0.4
E TIV
E
1m 100 10 0
100n
AD LO
-25C... |
| Description |
RIVET STEEL 3/32X.250
Rectifier diode
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| File Size |
54.48K /
2 Page |
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it Online |
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Pan Jit International I...
PANJIT[Pan Jit International Inc.]
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| Part No. |
BAV20WS BAV16WS BAV21WS BAV16 BAV19WS
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| OCR Text |
...k Forward Surge C urrent, 8.3ms si ngle half si ne-wave superi mposed on rated load (JED EC method) Power D i ssi pati on D erate Above 25OC Maxi mum Forward Voltage @ I F=100 mA Maxi mum D C Reverse C urrent at Rated D C Blocki ng Voltage ... |
| Description |
SURFACT MOUNT SWITCHING DIODES
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| File Size |
103.45K /
3 Page |
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it Online |
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Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
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| Part No. |
MIE-406A2U
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| OCR Text |
...40 nm Good spectral matching to si-photodetector
1.00 MIN (.040) 2.54 (.100)
A
C
Notes : 1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured w... |
| Description |
KPT05A14-19S 的AlGaAs /砷化镓高功率- 46封装红外发光二极
AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
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| File Size |
31.93K /
2 Page |
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it Online |
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TFUNK[Vishay Telefunken]
VISAY[Vishay Siliconix]
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| Part No. |
TSHA650
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| OCR Text |
...ility Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistor... |
| Description |
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in 酶 5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
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| File Size |
87.31K /
6 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
RF2103PPCBA RF2103P
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| OCR Text |
...Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOIC-14
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* ...diodes are included to clip peak voltage excursions above approximately 15V to prevent voltage break... |
| Description |
MEDIUM POWER LINEAR AMPLIFIER
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| File Size |
190.80K /
10 Page |
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it Online |
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Price and Availability
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