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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD10000AF
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OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking... |
Description |
10W PACKAGED POWER PHEMT
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File Size |
182.95K /
3 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD10000V
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OCR Text |
...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 - 1.5 A) to delive... |
Description |
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS
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File Size |
238.27K /
3 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD1000AS
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OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or ou... |
Description |
1W PACKAGED POWER PHEMT
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File Size |
530.41K /
8 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD1000V
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OCR Text |
...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source. Typic... |
Description |
1W POWER PHEMT
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File Size |
194.57K /
3 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD1050
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OCR Text |
...The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 m by 1050 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m... |
Description |
0.75W POWER PHEMT
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File Size |
174.13K /
2 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD2000AS
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OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or ou... |
Description |
2W PACKAGED POWER PHEMT
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File Size |
278.08K /
7 Page |
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it Online |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD2000V
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OCR Text |
...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source. Typic... |
Description |
2W POWER PHEMT
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File Size |
503.79K /
3 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD200P70
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OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 200 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD200P70 is also available in die... |
Description |
HI-FREQUENCY PACKAGED PHEMT
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File Size |
187.65K /
3 Page |
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Amphenol, Corp. FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD200
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OCR Text |
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The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 200 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure mi... |
Description |
22 UF 10% 16V (CASE C;6032) TANT C CAP 一般用途PHEMT器件 GENERAL PURPOSE PHEMT
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File Size |
182.65K /
2 Page |
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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
FPD2250DFN
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OCR Text |
...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure ... |
Description |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
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File Size |
151.56K /
5 Page |
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it Online |
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Price and Availability
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