Part Number Hot Search : 
8F400S 0M1HTR CX162 XN04321 70018 BUL138FP A0087 74HC564
Product Description
Full Text Search
  pseudomorphic Datasheet PDF File

For pseudomorphic Found Datasheets File :: 275    Search Time::1.469ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD10000AF
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking...
Description 10W PACKAGED POWER PHEMT

File Size 182.95K  /  3 Page

View it Online

Download Datasheet





    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD10000V
OCR Text ...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 - 1.5 A) to delive...
Description 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS

File Size 238.27K  /  3 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD1000AS
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or ou...
Description 1W PACKAGED POWER PHEMT

File Size 530.41K  /  8 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD1000V
OCR Text ...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source. Typic...
Description 1W POWER PHEMT

File Size 194.57K  /  3 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD1050
OCR Text ...The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 m by 1050 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m...
Description 0.75W POWER PHEMT

File Size 174.13K  /  2 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD2000AS
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or ou...
Description 2W PACKAGED POWER PHEMT

File Size 278.08K  /  7 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD2000V
OCR Text ...te depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD2000V includes Source plated thru-vias, and does not require wire bonds to the Source. Typic...
Description 2W POWER PHEMT

File Size 503.79K  /  3 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD200P70
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 200 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. . The FPD200P70 is also available in die...
Description HI-FREQUENCY PACKAGED PHEMT

File Size 187.65K  /  3 Page

View it Online

Download Datasheet

    Amphenol, Corp.
FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD200
OCR Text ... The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 200 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure mi...
Description 22 UF 10% 16V (CASE C;6032) TANT C CAP 一般用途PHEMT器件
GENERAL PURPOSE PHEMT

File Size 182.65K  /  2 Page

View it Online

Download Datasheet

    FILTRONIC[Filtronic Compound Semiconductors]
Part No. FPD2250DFN
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure ...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

File Size 151.56K  /  5 Page

View it Online

Download Datasheet

For pseudomorphic Found Datasheets File :: 275    Search Time::1.469ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of pseudomorphic

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
6.7389779090881