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  n-channel p-channel Datasheet PDF File

For n-channel p-channel Found Datasheets File :: 50731    Search Time::2.672ms    
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    PIC16F87-I-P PIC16F88-I-P

Microchip Technology
Part No. PIC16F87-I-P PIC16F88-I-P
OCR Text ...) pic16f87 7168 4096 368 256 16 n/a 1 y 2 y 2/1 pic16f88 7168 4096 368 256 16 1 1 y 2 y 2/1 18/20/28-pin enhanced flash mcus with nanowatt t...channel a/d converter (pic16f88 only) ? spi/i 2 c? ? two analog comparators ? ausart ?mclr (ra5) ca...
Description 18/20/28-Pin Enhanced Flash MCUs with nanoWatt Technology

File Size 2,533.67K  /  230 Page

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    Microchip Technology Inc.
Part No. PIC18F4585-P
OCR Text ...n the market today, when used i n the intended manner and under normal conditions.  there are dishonest and possibly illegal methods used ...channel analog-to-digital converter module (a/d), up to 100 ksps - auto-acquisition capability - co...
Description Enhanced Flash Microcontrollers with ECAN Technology, 10-Bit A/D and nanoWatt Technology

File Size 3,667.53K  /  484 Page

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    Infineon
Part No. BTS660-P
OCR Text ...MD 1 General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded prot...
Description Smart High Side Switches - 9mOhm - Vbb(on) = 5V-58V - TO220-7-3

File Size 192.74K  /  16 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ... integral reverse --- --- -76 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -11A, VGS = 0V --- 150 220 ns TJ = 25C, IF = -11A --- 830...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description -100V Single p-channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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