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    NX7663JB-BC

Renesas Electronics Corporation
Part No. NX7663JB-BC
OCR Text ...on on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product semiconductor laser avoid exposure-invisible laser radiation i...
Description LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

File Size 147.88K  /  8 Page

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    NX7563JB-BC

Renesas Electronics Corporation
Part No. NX7563JB-BC
OCR Text ...on on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product semiconductor laser avoid exposure-invisible laser radiation i...
Description LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION

File Size 148.95K  /  8 Page

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    SBL51414N SBL51414G SBL51414Z SBL51214Z SBL52414Z SBL52214Z

Infineon Technologies AG
Part No. SBL51414N SBL51414G SBL51414Z SBL51214Z SBL52414Z SBL52214Z
OCR Text ...uct According to IEC 60825-1 invisible LASER RADIATION AVOID EXPOSURE TO BEAM Class 3B Laser Product Figure 5 Required Labels Class IIIb Laser Product According to FDA Regulations Complies with 21 CFR 1040.10 and 1040.11 LASE...
Description Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Low Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving

File Size 231.21K  /  11 Page

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    NX7363JB-BC

Renesas Electronics Corporation
Part No. NX7363JB-BC
OCR Text ...on on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product semiconductor laser avoid exposure-invisible laser radiation i...
Description LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION

File Size 147.52K  /  8 Page

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    Infineon
Part No. STL51007G STL51007GE929 STL51007GE9483
OCR Text ...0 mw beam divergence (1/e 2 )10 invisible laser radiation avoid exposure to beam class 3b laser product semiconductor laser invisible radiation class iiib laser product laser radiation - avoid direct exposure to beam stl51007x packag...
Description 1300 nm Laser, Low Power

File Size 234.83K  /  10 Page

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    NX7535BN-AA NX7535AN-AA

Renesas Electronics Corporation
Part No. NX7535BN-AA NX7535AN-AA
OCR Text ...on on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this ...
Description LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION

File Size 177.83K  /  11 Page

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    D374-10F D374-10A D374 D374-02A D374-02F D374-02N

AGERE[Agere Systems]
Part No. D374-10F D374-10A D374 D374-02A D374-02F D374-02N
OCR Text ... radiation exposure. DANGER invisible LASER RADIATION IS EMITTED FROM THE END OF FIBER OR CONNECTOR Avoid direct exposure to beam Do not view beam directly with optical instruments invisible LASER RADIATION EMITTED FROM END OF FIBER ...
Description D374-Type Digital Uncooled 2.5 Gbits/s Laser Module D374型数码制.5 Gb /秒激光模
D374-Type Digital Uncooled 2.5 Gbits/s Laser Module

File Size 56.28K  /  8 Page

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    NEC[NEC]
Part No. NX8561JC NX8501CC-BA NX8501BC-BA NX8501AC-BA NX8563LB NDL7540PA NX7460LE NX7660JC NX8501 NX8501AC NX8501AC-CA NX8501AG NX8501AG-BA NX8501AG-CA NX8501BC NX8501BC-CA NX8501BG NX8501BG-BA NX8501BG-CA NX8501CC NX8501CC-CA NX8501CG NX8501CG-BA NX8501CG-CA NX8562LB
OCR Text .... NEC Corporation DANGER invisible LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER NEC Building, 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-01, Japan T...
Description 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

File Size 95.42K  /  12 Page

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    NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NX7660JC-BA NX8563LB NX7460LE NX7660JC NX7660JC-CA NX8501 NX8561JC NX8562LB
OCR Text ...al. NEC Corporation DANGER invisible LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER NEC Building, 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-01, Japan T...
Description InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION InGaAsP的应变直流异质结激光二极管模块1 625纳米遥测应用

File Size 63.30K  /  12 Page

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    NX7337BF-AA

Renesas Electronics Corporation
Part No. NX7337BF-AA
OCR Text ...on on this product danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product avoid exposure-invisible laser radiation is emitted from this ...
Description LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

File Size 160.40K  /  9 Page

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