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    2SD1138

HITACHI[Hitachi Semiconductor]
Part No. 2Sd1138
OCR Text ...onditions I C = 50 mA, RBe = I e = 5 mA, IC = 0 VCB = 120 V, Ie = 0 VCe = 4 V, IC = 50 mA VCe = 10 V, IC = 500 mA*2 I C = 500 mA, IB = 50 m...d 160 to 320 B 60 to 120 2 2Sd1138 Maximum Collector dissipation Curve 40 Collector power ...
Description Silicon NPN Transistor
Silicon NPN Triple diffused

File Size 30.91K  /  6 Page

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    2SD1163 2SD1163A

HITACHI[Hitachi Semiconductor]
Part No. 2Sd1163 2Sd1163A
OCR Text ...V, Ie = 0 I C = 10 mA, RBe = I e = 10 mA, IC = 0 VCe = 5 V, IC = 5 A*1 I C = 5 A, IB = 0.5 A*1 I C = 5 A, IB = 0.5 A*1 I CP = 3.5 A, I B1 =...d-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi europe...
Description Silicon NPN Triple diffused

File Size 31.45K  /  6 Page

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    2SD1209 2SD1209K

HITACHI[Hitachi Semiconductor]
Part No. 2Sd1209 2Sd1209K
OCR Text ...an) : http://www.hitachi.com.tw/e/Product/SICd_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://ww...d-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi europe...
Description Silicon NPN epitaxial/ darlington
Silicon NPN epitaxial, darlington

File Size 30.18K  /  6 Page

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    2SD467

HITACHI[Hitachi Semiconductor]
Part No. 2Sd467
OCR Text ... A, Ie = 0 I C = 1 mA, RBe = I e = 10 A, IC = 0 VCB = 20 V, Ie = 0 VCe = 1 V, IC = 0.15 A (Pulse test) Collector to emitter breakdown V(...d-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi europe...
Description Silicon NPN epitaxial

File Size 29.20K  /  6 Page

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    2SD468

Hitachi Semiconductor
Part No. 2Sd468
OCR Text ... A, Ie = 0 I C = 1 mA, RBe = I e = 10 A, IC = 0 VCB = 20 V, Ie = 0 VCe = 2 V, IC = 0.5 A*2 I C = 0.8 A, IB = 0.08 A*2 VCe = 2 V, IC = 0.5 A...d-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi europe...
Description Silicon NPN Transistor
Silicon NPN epitaxial

File Size 29.49K  /  6 Page

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    2SD476 2SD476A 2SD476AK 2SD476K

HITACHI[Hitachi Semiconductor]
Part No. 2Sd476 2Sd476A 2Sd476AK 2Sd476K
OCR Text ...A, Ie = 0 I C = 50 mA, RBe = I e = 10 A, IC = 0 VCB = 50 V, Ie = 0 VCe = 4 V, IC = 1 A (Pulse test) VCe = 4 V, IC = 0.1 A I C = 2 A, IB = 0...d-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi europe...
Description Silicon NPN Triple diffused

File Size 32.08K  /  5 Page

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    2SD620 2SK620

PANASONIC[Panasonic Semiconductor]
Part No. 2Sd620 2SK620
OCR Text ...Symbol: 3N Internal Connection d G 0 to 0.1 0.1 to 0.3 0.40.2 0.8 S s electrical Characteristics (Ta = 25C) Parameter drain to Source cut-off current Gate to Source leakage current drain to Source breakdown voltage Gate ...
Description Silicon N-Channel MOS FeT

File Size 35.23K  /  2 Page

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    2SD655

Hitachi,Ltd.
Hitachi Semiconductor
Part No. 2Sd655
OCR Text ... A, Ie = 0 I C = 1 mA, RBe = I e = 10 A, IC = 0 VCB = 20 V, Ie = 0 VCe = 1 V, IC = 150 mA I C = 500 mA, IB = 50 mA*2 VCe = 1 V, IC = 150 mA...d 250 to 500 e 400 to 800 F 600 to 1200 2 2Sd655 Typical Output Characteristics Maximum Colle...
Description Silicon NPN epitaxial npn型硅外延

File Size 28.39K  /  6 Page

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    2SD667 2SD667A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2Sd667 2Sd667A
OCR Text ... A, Ie = 0 I C = 1 mA, RBe = I e = 10 A, IC = 0 VCB = 100 V, Ie = 0 VCe = 5 V, I C = 150 mA*2 VCe = 5 V, I C = 500 mA*2 I C = 500 mA, I B =...d 160 to 320 2 2Sd667, 2Sd667A Maximum Collector dissipation Curve 1.2 Collector Power dissip...
Description Silicon NPN epitaxial npn型硅外延
Silicon NPN Transistor

File Size 31.22K  /  6 Page

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    2SD669 2SD669A SD669

HITACHI[Hitachi Semiconductor]
Part No. 2Sd669 2Sd669A Sd669
OCR Text ...A, Ie = 0 I C = 10 mA, RBe = I e = 1 mA, IC = 0 VCB = 160 V, Ie = 0 VCe = 5 V, IC = 150 mA*2 VCe = 5 V, IC = 500 mA*2 I C = 500 mA, I B = 5...d 160 to 320 -- Maximum Collector dissipation Curve 30 Collector power dissipation PC (W) 3 Colle...
Description Silicon NPN epitaxial

File Size 35.10K  /  7 Page

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