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  dual npn bipolar transistor Datasheet PDF File

For dual npn bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    TOSHIBA[Toshiba Semiconductor]
Part No. GT40G121
Description Insulated Gate bipolar transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT

File Size 139.45K  /  5 Page

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    LM1458 LM1458CM LM1458CN LM1458M LM1458N LM1458_LM1458C

Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. LM1458 LM1458CM LM1458CN LM1458M LM1458N LM1458_LM1458C
Description dual Operational Amplifier dual OP-AMP, 7500 uV OFFSET-MAX, PDIP8
IC,OP-AMP,dual,bipolar,DIP,8PIN,PLASTIC
From old datasheet system

File Size 61.73K  /  10 Page

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    Motorola, Inc.
Part No. HC05 MC68HC705X32
Description bipolar transistor; transistor Polarity:dual P Channel; Power Dissipation:20W; DC Current Gain Min (hfe):25; Collector Current:1A; DC Current Gain Max (hfe):200; Power (Ptot):20W
HCMOS microcontroller unit

File Size 948.81K  /  232 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description Insulated Gate bipolar transistor N-Channel
Insulated Gate bipolar transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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    STC03DE170HP07 STC03DE170HP

ST Microelectronics
STMicroelectronics
Part No. STC03DE170HP07 STC03DE170HP
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W

File Size 256.65K  /  9 Page

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    STC03DE170HV07 STC03DE170HV

ST Microelectronics
STMicroelectronics
Part No. STC03DE170HV07 STC03DE170HV
Description Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W

File Size 229.70K  /  9 Page

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    HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B
Description RF bipolar transistor; Collector Emitter Voltage, Vceo:3V; transistor Polarity:dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE

File Size 108.88K  /  8 Page

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    HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTP14N37G3VL HGT1S14N37G3VLS HGT1S14N37G3VLS9A
Description TRANS IGBT CHIP N-CH 380V 25A 3TO-263AB
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANS PNP bipolar 45V SOT323
transistor | IGBT | N-CHAN | 380V V(BR)CES | 18A I(C) | TO-263AB
transistor PNP bipolar 45V SOT23

File Size 156.76K  /  6 Page

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    INFINEON[Infineon Technologies AG]
Part No. BFS17W BFS17W.
Description RF-bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
RF-bipolar npn Type transistors with transition frequency from 1 to 6 GHz
npn Silicon RF transistor

File Size 44.03K  /  5 Page

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    BFP620E7764

Infineon Technologies AG
Part No. BFP620E7764
Description RF-bipolar - npn Silicon Germanium RF transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, npn, RF SMALL SIGNAL transistor

File Size 184.23K  /  7 Page

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For dual npn bipolar transistor Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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