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114N39 11S44 21421 MB86612 9435G 2SC162 SD946A C114E
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For cgs Found Datasheets File :: 3356    Search Time::3.359ms    
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    IRL5602S IRF530S IRL5602STRR IRL5602STRL

IRF[International Rectifier]
Part No. IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text ...V) VGS = 0V, f = 1MHz Ciss = cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = -12A VDS =-16V VDS =-10V 12 C, Capacitance (pF) 2000 Ciss 1600 1200 800 9 Coss 6 Crss 400 0 3 1 10 100 ...
Description -20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 169.26K  /  8 Page

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    IRLBA1304 IRLBA1304P

IRF[International Rectifier]
Part No. IRLBA1304 IRLBA1304P
OCR Text ...00 VGS = 0V, f = 1MHz Ciss = cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 15 ID = 110A VDS = 32V VDS = 20V VDS = 8V 12 C, Capacitance (pF) 8000 Ciss 9 6000 6 4000 Coss 2000 3 Crss 0 1 10 ...
Description HEXFET? Power MOSFET

File Size 103.65K  /  8 Page

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    MRF140

MOTOROLA[Motorola, Inc]
Part No. MRF140
OCR Text ...rain (Cgd), and gate-to-source (cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and rever...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 162.25K  /  6 Page

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    MRF141G

MOTOROLA[Motorola, Inc]
Part No. MRF141G
OCR Text ...plications. DRAIN Cgd GATE Cds cgs Ciss = Cgd = cgs Coss = Cgd = Cds Crss = Cgd ing should be avoided. These conditions can result in turn- on of the device due to voltage build-up on the input capacitor due to leakage currents or picku...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 141.68K  /  6 Page

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    MRF141

MOTOROLA[Motorola, Inc]
Part No. MRF141
OCR Text ...plications. DRAIN Cgd GATE Cds cgs Ciss = Cgd = cgs Coss = Cgd = Cds Crss = Cgd ing should be avoided. These conditions can result in turn- on of the device due to voltage build-up on the input capacitor due to leakage currents or picku...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 159.11K  /  8 Page

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    MRF148

MOTOROLA[Motorola, Inc]
Part No. MRF148
OCR Text ...rain (Cgd), and gate-to-source (cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and rever...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 145.04K  /  6 Page

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    MRF150

MOTOROLA[Motorola, Inc]
Part No. MRF150
OCR Text ...rain (Cgd), and gate-to-source (cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and rever...
Description N-CHANNEL MOS LINEAR RF POWER FET

File Size 146.86K  /  6 Page

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    MRF151G

MOTOROLA[Motorola, Inc]
Part No. MRF151G
OCR Text ...plications. DRAIN Cgd GATE Cds cgs Ciss = Cgd = cgs Coss = Cgd = Cds Crss = Cgd cuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage cu...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 155.18K  /  6 Page

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    MRF151

MOTOROLA[Motorola, Inc]
Part No. MRF151
OCR Text ...r pickup. DRAIN Cgd GATE Cds cgs Ciss = Cgd = cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 6 may give the designer additional informa...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 182.89K  /  8 Page

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    MRF154

MOTOROLA[Motorola, Inc]
Part No. MRF154
OCR Text ...ain (Cgd), and gate-to- source (cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and rever...
Description N-CHANNEL BROADBAND RF POWER MOSFET

File Size 160.11K  /  8 Page

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