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For carbide Found Datasheets File :: 535    Search Time::1.5ms    
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    IDW40G65C512

Infineon Technologies AG
Part No. IDW40G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw40g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,175.95K  /  11 Page

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    IDW20G65C512

Infineon Technologies AG
Part No. IDW20G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw20g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.43K  /  11 Page

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    IDW16G65C512

Infineon Technologies AG
Part No. IDW16G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw16g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.63K  /  11 Page

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    SHB681123E

Sensitron
Part No. SHB681123E
OCR Text carbide SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON carbide SINGLE PHASE FULL WAVE BRIDGE FEATURES: * NO RECOVERY TIME OR REVERSE RECOVERY LOSSES * NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR * 15000-VOLT ...
Description HIGH VOLTAGE SILICON carbide SINGLE PHASE FULL WAVE BRIDGE

File Size 35.04K  /  2 Page

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    SHD620051

Sensitron
Part No. SHD620051
OCR Text carbide RECTIFIER DESCRIPTION: A 600-VOLT, 10 AMP POWER SILICON carbide RECTIFIER IN A CERAMIC HERMETIC LCC-5 PACKAGE FEATURES: * NO RECOVERY TIME OR REVERSE RECOVERY LOSSES * NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR * AVAILABLE SCRE...
Description HERMETIC SILICON carbide RECTIFIER

File Size 174.17K  /  3 Page

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    SHD620052

Sensitron
Part No. SHD620052
OCR Text carbide RECTIFIER DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON carbide RECTIFIER IN A CERAMIC HERMETIC LCC-5 PACKAGE FEATURES: * NO RECOVERY TIME OR REVERSE RECOVERY LOSSES * NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR * SCREENED VERSI...
Description HERMETIC SILICON carbide RECTIFIER

File Size 159.19K  /  2 Page

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    SHD626150 SHD626150D SHD626150N SHD626150P

Sensitron
Part No. SHD626150 SHD626150D SHD626150N SHD626150P
OCR Text ... SHD626150P HERMETIC SILICON carbide RECTIFIER DESCRIPTION: A 300-VOLT, 20 AMP, POWER SILICON carbide RECTIFIER IN A HERMETIC TO-257 PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL FEATURES: * NO RECOVERY TIME OR REVERSE RECOVERY LOSSE...
Description HERMETIC SILICON carbide RECTIFIER

File Size 70.99K  /  4 Page

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    IDW12G65C512

Infineon Technologies AG
Part No. IDW12G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw12g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.74K  /  11 Page

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    IDW10G65C512

Infineon Technologies AG
Part No. IDW10G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2013-01-15 5 th generation thinq! tm 650v sic schottky diode idw10g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,174.82K  /  11 Page

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    IDH06G65C512

Infineon Technologies AG
Part No. IDH06G65C512
OCR Text carbide diode final datasheet rev. 2.2, 2012-12-10 5 th generation thinq! tm 650v sic schottky diode idh06g65c5 1) j-std20 and jesd22 2) all devices tested under avalanche conditions for a time periode of 10ms ...
Description ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

File Size 1,173.95K  /  11 Page

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For carbide Found Datasheets File :: 535    Search Time::1.5ms    
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Price and Availability




 
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