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INTERSIL[Intersil Corporation]
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| Part No. |
IRFP9240 FN2294
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| OCR Text |
...evel of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regu...Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Char... |
| Description |
From old datasheet system
12A 200V 0.500 Ohm P-Channel Power MOSFET
12A, 200V, 0.500 Ohm, P-Channel Power MOSFET
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| File Size |
55.82K /
7 Page |
 View
it Online |
Download Datasheet
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Intersil
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| Part No. |
IRFP250 FN2330
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| OCR Text |
...evel of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regu...Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Char... |
| Description |
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
From old datasheet system
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| File Size |
55.16K /
7 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HAF70009
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| OCR Text |
...withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching con... |
| Description |
56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET
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| File Size |
107.10K /
10 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDB3682NL
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| OCR Text |
...ed figure 4 a e as single pulse avalanche energy (note 1) 55 mj p d power dissipation 95 w derate above 25 o c0.63w/ o c t j , t stg operating and storage temperature -55 to 175 o c r jc thermal resistance junction to case to-220, to-263 1... |
| Description |
100V N-Channel Power Trench MOSFET 32A, 0.036 ohm @ Vgs = 10V, TO-263/D2PAK Package 6 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
308.94K /
11 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp.
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| Part No. |
FDB3652NL
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| OCR Text |
...ed figure 4 a e as single pulse avalanche energy (note 1) 182 mj p d power dissipation 150 w derate above 25 o c1.0w/ o c t j , t stg operating and storage temperature -55 to 175 o c r jc thermal resistance junction to case to-220, to-263,... |
| Description |
N-Channel Power Trench MOSFET, 100V, 61A, 0.016 Ohms 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
201.36K /
11 Page |
View
it Online |
Download Datasheet |
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