...na
Test conditions I C = -10 a, IE = 0 I C = -1 ma, RBE = I E = -10 a, IC = 0 vCB = -18 v, IE = 0 vEB = -2 v, IC = 0 vCE = -12 v, IC = -2 ma
Collector to emitter breakdown v(BR)CEO voltage Emitter to base breakdown voltage Collector ...
...100 -10 220 v v MHz dB pF Unit a a
*h
FE
Rank classification
B 70 ~ 140 C 110 ~ 220 hFE
Rank
1
Transistor
PC -- Ta
500 -30 Ta=25C 450 -25
2Sa838
IC -- vCE
Collector to emitter saturation voltage vCE(sat) (v)
-100...
Description
Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
...na
Test conditions I C = -10 a, IE = 0 I C = -1 ma, RBE = I E = -10 a, IC = 0 vCB = -18 v, IE = 0 vEB = -2 v, IC = 0 vCE = -12 v, IC = -2 ma
Collector to emitter breakdown v(BR)CEO voltage Emitter to base breakdown voltage Collector ...
a
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2Sa872, 2Sa872a
absolute Maximum Ratings (Ta = 25C)
Item Collector to ...v v v ma mW C C
Electrical Characteristics (Ta = 25C)
2Sa872 Item Collector to emitter breakdown...
....5 v MHz pF min typ max -2 Unit a v v
*h
FE
Rank classification
Q 60 ~ 150 R 100 ~ 220 hFE
Rank
3.2
W
1
2
3
1:Emitter 2:Collector 3:Base EIaJ:SC-51 TO-92L Package
1
Transistor
PC -- Ta
1.2 -120 Ta=25C
...
... 0.50.1 2.30.2 3 1.760.1
v v a a W C C
1 2
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter...
Description
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
a
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2Sa893, 2Sa893a
absolute Maximum Ratings (Ta = 25C)
Item Collector to ...v v v ma mW C C
Electrical Characteristics (Ta = 25C)
2Sa893 Item Collector to emitter breakdown...
... mv min typ max -100 -1 Unit na a v v v
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 hFE
Rank
1
Transistor
PC -- Ta
500 -24 Ta=25C 450 -20 IB=-50a -40a -16 -35a -30a -12 -25a -20a -8 -15a -10a -4 -5a 0 0 40 80 120 ...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...aSE
Collector current : -0.7 a ICM Collector-base voltage v(BR)CBO : -80 v Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICaL CHaRaCTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-e...
... -1.5 25 150 -50~150 Unit v v v a W
ELECTRICaL CHaRaCTERISTICS (Ta=25)
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation voltage Current Gain Bandwidth Product Symbol ICBO I...
Description
PNP EPITaXIaL SILICON TRaNSISTOR(LOW FREQUENCY POWER aMPLIFIER)