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Vishay Intertechnology, Inc.
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| Part No. |
M55342K09B2H87P M55342K09B2H80R M55342K09B2H80M M55342K09B2H87M M55342K09B2H87R M55342K09B2H80P M55342K09B4G42P M55342K09B4G42M
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| OCR Text |
...ability mil-prf-55342/2/3/4/5/6/7/8/9/10 qualified, type rm features ? allows wide design flexibility for use with hybrid circuitry ? meets ...62m 10 - 1m 5.6 - 15m 10 - 15m 10 - 7.5m 10 - 1m 5.6 - 15m 10 - 15m 10 - 7.5m 10 - 1m 5.49 - 5.62m 1... |
| Description |
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 2 %, 100 ppm, 2870 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 2 %, 100 ppm, 2800 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 2 %, 100 ppm, 4.42 ohm, SURFACE MOUNT, 2512 CHIP
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| File Size |
27.23K /
2 Page |
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Sumida, Corp.
SUMIDA CORP
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| Part No. |
CDC5D23BNP8R2MB CDC5D20NP821KC CDC5D23BNP820KB CDC5D23B-121KB CDC5D23B-330KB CDC5D23B-6R8MC NP330KB
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| OCR Text |
7 0 7 1 power inductors < smd t ype : cdc series inductors for el driver > smd t ype cdc series inductors for el driver smd type small...62m(48m ) 78m(60m ) 91m(70m ) 103m(87m ) 133m(102m ) 148m(114m ) 166m(128m ) 213m(164m ) 248m(191m )... |
| Description |
1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
1 ELEMENT, 820 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
1 ELEMENT, 82 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
1 ELEMENT, 120 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 33 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 6.8 uH, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
127.13K /
2 Page |
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NXP Semiconductors N.V.
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| Part No. |
PSMN034-100BS
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| OCR Text |
...3.3 ? ; v gs =10v; r g(ext) =4.7 ? ; t j =25c -12-ns t r rise time - 10 - ns t d(off) turn-off delay time - 28 - ns t f fall time -9-ns
psmn034-100bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2... |
| Description |
N-channel 100 V 34.5 m standard level MOSFET in D2PAK.
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| File Size |
205.94K /
14 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON3611
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| OCR Text |
...ource voltage 20 i d -6 20 5 -4.7 -30 3.8 power dissipation b t a =25c p d 2.1 c/w c/w maximum junction-to-ambient a d 48 98 58 maximum junction-to-lead 2.5 w t a =70c 1.3 1.6 general description features www.freescale.net.cn 1 / 9
symb... |
| Description |
30V Complementary MOSFET
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| File Size |
550.29K /
9 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AON1634
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| OCR Text |
...gs(th) gate threshold voltage 0.7 1.05 1.5 v i d(on) 16 a 43.5 54 t j =125c 68 84 48 62 m w 62 82 m w g fs 15 s v sd 0.75 1 v i s 2.5 a c iss 245 pf c oss 35 pf c rss 20 pf r g 5.3 w q g (10v) 5.7 10 nc q g (4.5v) 2.6 5 nc q gs 0.5 nc q gd ... |
| Description |
30V N-Channel MOSFET
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| File Size |
258.58K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO7414
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| OCR Text |
...6 70 m ? 66 85 g fs 15 s v sd 0.7 1 v i s 0.35 a c iss 260 320 pf c oss 48 pf c rss 27 pf r g 3 4.5 ? q g 2.9 3.8 nc q gs 0.4 nc q gd 0.6 nc t d(on) 2.5 ns t r 3.2 ns t d(off) 21 ns t f 3ns t rr 14 19 ns q rr 3.4 nc electrical characteristi... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
380.87K /
4 Page |
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