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78M18 P600A LTC68 TA0415A 1N5257B N521A M30240E1 AD7243
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  600v-1.8-5a- Datasheet PDF File

For 600v-1.8-5a- Found Datasheets File :: 3619    Search Time::2.14ms    
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    IRG4BC20MD-SPBF

International Rectifier
Part No. IRG4BC20MD-SPBF
OCR Text 600v v ce(on) typ. = 1.85v @v ge = 15v, i c = 11a parameter min. typ. max. units r jc junction-to-case - igbt ------ ------ 2.1 r jc junction-to-case - diode ------ ------ 2.5 c/w r cs case-to-sink, flat, greased surfac...
Description 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD

File Size 293.27K  /  12 Page

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    Icemos Technology
Part No. ICE7N60
OCR Text ...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.52 typ q g v ds =480v 21nc typ icemos and its sister...1 sp - 7n60 - 000 - 3 05/15/2013 d s g t0220 standard metal heatsink 1=gate, 2=dr...
Description N-Channel Enhancement Mode MOSFET

File Size 555.03K  /  9 Page

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    Icemos Technology
Part No. ICE7N60FP
OCR Text ...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.52 typ q g v ds =480v 21nc typ icemos and its sister...1 sp - 7n60fp - 000 - 2 05/15/2013 d s g t0220 full - pak isolated (t0 - 220) halog...
Description N-Channel Enhancement Mode MOSFET

File Size 516.80K  /  9 Page

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    APT25GP90B

Advanced Power Technology
Part No. APT25GP90B
OCR Text ...nsient * 100 kHz operation @ 600V, 21A * 50 kHz operation @ 600V, 33A * SSOA Rated E C G E All Ratings: TC = 25C unless otherwis...1 @ TC = 150C Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and ...
Description MOSFET
POWER MOS 7 IGBT

File Size 175.79K  /  6 Page

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    APT25GP90BDQ1G APT25GP90BDQ1

Advanced Power Technology
Part No. APT25GP90BDQ1G APT25GP90BDQ1
OCR Text ...Inductive Switching (25C) VCC = 600V VGE = 15V RG = 4.3 I C = 40A VGE = 15V MIN TYP MAX UNIT pF V nC 2100 220 40 7.5 110 16 47 110 13 16 ...1.18 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi de...
Description POWER MOS 7 IGBT

File Size 439.54K  /  9 Page

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    APT25GP90BDF1

Advanced Power Technology
Part No. APT25GP90BDF1
OCR Text ...nsient * 100 kHz operation @ 600V, 21A * 50 kHz operation @ 600V, 33A * SSOA Rated E C G E All Ratings: TC = 25C unless otherwis...1 @ TC = 150C Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and ...
Description MOSFET
POWER MOS 7 IGBT

File Size 205.60K  /  9 Page

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    SKB02N60 SKP02N60

INFINEON[Infineon Technologies AG]
Part No. SKB02N60 SKP02N60
OCR Text ...- Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviou...1 (TO-220AB) P-TO-263-3-2 (D-PAK) (TO-263AB) * Complete product spectrum and PSpice Models : h...
Description IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 392.65K  /  13 Page

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    BYV25FB-600 BYV25FB-600-15

NXP Semiconductors
Part No. BYV25FB-600 BYV25FB-600-15
OCR Text ...etitive peak reverse voltage --600v i f(av) average forward current square-wave pulse; =0.5; t mb 126 c; see figure 1 ; see figure 2 --5a static characteristics v f forward voltage i f =5a; t j =25c; see figure 5 -1.31.9v i f =5a;...
Description Enhanced ultrafast power diode
   Enhanced ultrafast power diode

File Size 161.90K  /  12 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. QM75E3Y-2H QM75E2Y-2H QM75E2Y
OCR Text ...-- -- -- -- -- -- 75/100 -- VCC=600V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 100 2.5 3.5 1.8 -- 2.5 15 3.0 0.25 1.2 0.13 Unit mA mA ...
Description MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 102.45K  /  6 Page

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    APT6010JFLL

Microsemi Corporation
Part No. APT6010JFLL
OCR Text 600V 47A 0.100 S D POWER MOS 7 (R) R FREDFET G S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enha...1 SO 2 T- 27 "UL Recongnized" file # 145592 ISOTOP fi * Increased Power Dissipati...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 259.09K  /  5 Page

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