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    2SB1016

WINGS[Wing Shing Computer Components]
Part No. 2SB1016
OCR Text ... Rating -100 -100 -5 -3 25 150 -50~150 Unit V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector- Emitter Saturation Voltage Current Gain Bandwidth Pro...
Description PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

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    2SB1025

Hitachi Semiconductor
Part No. 2SB1025
OCR Text ...MHz pF I C = -500 mA, I B = -50 mA (Pulse test) VCE = -5 V, IC = -150 mA VCE = -5 V, IC = -150 mA VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1025 is grouped by hFE1 as follows. DH 60 to 120 DJ 100 to 200 DK 160 to 320 2 2SB1025 M...
Description Silicon PNP Epitaxial

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    2SB1026

HITACHI[Hitachi Semiconductor]
Part No. 2SB1026
OCR Text ...MHz pF I C = -500 mA, I B = -50 mA (Pulse test) VCE = -5 V, IC = -150 mA VCE = -5 V, IC = -150 mA VCB = -10 V, IE = 0, f = 1 MHz 1. The 2SB1026 is grouped by hFE1 as follows. DL 60 to 120 DM 100 to 200 See characteristic curves of ...
Description Silicon PNP Epitaxial

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    2SB1027

HITACHI[Hitachi Semiconductor]
Part No. 2SB1027
OCR Text ...e V V I C = -0.5 A, IB = -50 mA, Pulse VCE = -5 V, IC = -0.15 A, pulse 1. The 2SB1027 is grouped by hFE1 as follows. EH 60 to 120 EJ 100 to 200 EK 160 to 320 2 2SB1027 Typical Output Characteristics Maximum Collector Dissipa...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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    2SB1028

HITACHI[Hitachi Semiconductor]
Part No. 2SB1028
OCR Text ...e V V I C = -0.5 A, IB = -50 mA, Pulse VCE = -5 V, IC = -0.15 A, pulse 1. The 2SB1028 is grouped by hFE1 as follows. EL 60 to 120 EM 100 to 200 2 2SB1028 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC...
Description Silicon PNP Epitaxial

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    2SB1030 2SB1030A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1030 2SB1030A
OCR Text ... (Ta=25C) Ratings -30 -60 -25 -50 -7 -1 - 0.5 300 150 -55 ~ +150 Unit marking +0.2 0.45-0.1 15.60.5 0.70.1 Optimum for high-density...100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 Collector power ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

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    2SB1032 2SB1032K

HITACHI[Hitachi Semiconductor]
Part No. 2SB1032 2SB1032K
OCR Text ...emitter Voltage VCE (V) 0 50 100 Case Temperature TC (C) 150 -10 DC current transfer ratio hFE Typical Output Characteristics Pc =8 .5 0W -1 -0.9 -1.0 DC Current Transfer Ratio vs. Collector Current 30,000 10,000 3,000 ...
Description Silicon PNP Triple Diffused

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    2SB1033

WINGS[Wing Shing Computer Components]
Part No. 2SB1033
OCR Text ...tg Rating -80 -60 -5 -3 40 150 -50~150 Unit V V V A W ELECTRICAL CHARACTERISTICS (TA=25) Characteristic Collector Cutoff Current Emi...100 100 120 1.0 8 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http:/...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SB1036

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1036
OCR Text ...(Ta=25C) Ratings -120 -120 -5 -50 -20 300 150 -55 ~ +150 Unit V 1 2 3 1.27 1.27 V V mA mA mW C C 1:Emitter 2:Collector 3:Ba...100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 hFE Rank 2....
Description Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

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    2SB1048

HITACHI[Hitachi Semiconductor]
Part No. 2SB1048
OCR Text ...25C 1 Shot Pulse 0.4 0 50 100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collector to Emitter Voltage VCE (V) Typical Output Characteristics -1.0 PC = 1 DC Current Transfer Ratio vs. Collector Current 100,000 DC Cur...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 31.00K  /  6 Page

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