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  2.5 5 12 -12v Datasheet PDF File

For 2.5 5 12 -12v Found Datasheets File :: 34270    Search Time::2.703ms    
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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ... VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 4.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Lea...5 --- and center of die contact 1100 --- VGS = 0V 170 --- pF VDS = 25V 18 --- = 1.0MHz, See Fig. 5 ...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9520L) is available for lowprofile...5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...pacitance Min. -100 --- --- -2.0 1.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.10 --- --- --- --- --- --- --- --- --- --- 14 47 28 31 4.5 7.5 350 110 70 Max. Units Conditions --- V VGS = 0V, ID = -...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for lowprofil...5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...pacitance Min. -100 --- --- -2.0 3.2 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 15 58 45 46 4.5 7.5 760 260 170 Max. Units Conditions --- V VGS = 0V, ID = ...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9540L) is available for lowprofile...5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...pacitance Min. -100 --- --- -2.0 5.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.11 --- --- --- --- --- --- --- --- --- --- 15 67 51 51 4.5 7.5 1300 400 240 Max. Units Conditions --- V VGS = 0V, ID =...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...nt On-State Drain Current (Note 2) Gate to Source Leakage Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS ID(ON) ...5 - TYP 0.150 7 16 65 47 28 70 14 56 1100 550 250 3.5 MAX -4 -25 -250 100 0.200 20 100 70 70 9...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profi...5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ ...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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