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1e5 Datasheet PDF File

For 1e5 Found Datasheets File :: 281 Search Time::1.109ms
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				INTERSIL[Intersil Corporation]
Part No.	FSF250D3 FSF250R4 FSF250 FSF250D FSF250D1 FSF250R FSF250R3 FSF250R1 FN4046
OCR Text	...(NSWC), Crane, IN. 5. FLUENCE = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	24A, 200V, 0.110 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 24A/ 200V/ 0.110 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs From old datasheet system
File Size	44.57K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSGYC260D1 FSGYC260R FSGYC260R3 FSGYC260R4 FN4851
OCR Text	...ven National Labs. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 60 82 82 TYPICAL RANGE () 36 32 28 28 APPLIED VGS BIAS (V) -20 ...
Description	From old datasheet system Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFET
File Size	81.00K / 8 Page	View it Online	Download Datasheet

				Intersil
Part No.	FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160D FSJ9160D1 FSJ9055R FSJ9055D1
OCR Text	...(nswc), crane, in. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. does not exhibit single event burnout (seb) or single event gate rupture (segr). typical performance curves unless otherwise speci?ed figure 1. single event effects sa...
Description	44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
File Size	66.63K / 8 Page	View it Online	Download Datasheet

For 1e5 Found Datasheets File :: 281 Search Time::1.109ms
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