...O ICP IC PC Tj Tstg
Ratings -15 -10 -7 -1 - 0.5 300 150 -55 ~ +150
Unit V V
1
2
3
1.27 1.27
V A A mW C C
1:Emitter 2:Collector 3:Base
2.540.15
EIAJ:SC-72 New S Type Package
s Electrical Characteristics
Parame...
... V, IE = 0 VCE = -1 V, I C = -0.15 A (Pulse test)
VCE(sat) VBE fT Cob
V V MHz pF
I C = -0.5 A, IB = -0.05 A VCE = -1 V, IC = -0.15 ...3 -1 0 -0.6 -1.0 -0.2 -0.4 -0.8 Base to Emitter Voltage VBE (V) 25C VCE = -1 V DC Current transfer r...
... -- Typ -- -- -- -- -- -- -- -- 15 0.3 3.0 2.5 Max -- -- -- -1 200 -- -1.0 -1.2 -- -- -- -- V V MHz s s s Unit V V V A Test conditions I C = -10 A, IE = 0 I C = -50 mA, RBE = I E = -10 A, IC = 0 VCB = -50 V, IE = 0 VCE = -4 V, IC = -1 A VC...
...
1.27
123
2.30.2
2.540.15
1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SB621 2SB621A 2SB621 2SB6...
...in 60* 20 (110) 130 (30)20 (-)0.15 (-)0.85 (80) 100 (100) 500 (600) 700 (-)0.4 (-)1.2 MHz MHz pF V V ns ns ns ns ns ns typ max 320* Unit
...3/4
2SB631, 631K/2SD600, 600K
Specifications of any and all SANYO products described or contai...
Description
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体