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IRF[International Rectifier]
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| Part No. |
IRHM4250 IRHM7250 IRHM8250 IRHM3250 JANSR2N7269
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| OCR Text |
... (Si) RDS(on) 0.10 0.10 0.10 ID 26A 26A 26A 26A
IRHM7250 JANSR2N7269 200V, N-CHANNEL
REF: MIL-PRF-19500/603 (R) TM RAD Hard HEXFET TECHNOLOGY
QPL Part Number JANSR2N7269 JANSF2N7269 JANSG2N7269 JANSH2N7269
1000K Rads (Si) 0.10 HEXFE... |
| Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
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| File Size |
272.45K /
13 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
BSS87
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| OCR Text |
... V
Reverse diode dv/dt
IS=0.26A, V DS=192V, di/dt=200A/s, Tjmax=150C
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation, related to min. footprint
TA=25C
Operating and storage temperature IEC climatic ... |
| Description |
SIPMOS Small-Signal-Transistor
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| File Size |
185.87K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM50H14FT3G
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| OCR Text |
26A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
Features * Power MOS 7(R) FREDFETs - Low RDSon ... |
| Description |
Full - Bridge MOSFET Power Module
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| File Size |
298.06K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8014L2LL-03 APT8014L2LL
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| OCR Text |
... 100 500 100 3 5
(VGS = 10V, 26A)
Ohms A nA Volts
12-2003 050-7103 Rev A
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 3... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
85.36K /
5 Page |
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it Online |
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http://
MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8014L2FLLG APT8014L2FLL
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| OCR Text |
...250 1000 100 3 5
(VGS = 10V, 26A)
Ohms A nA Volts
5-2006 050-7104 Rev B
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
234.95K /
5 Page |
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it Online |
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SAMHOP[SamHop Microelectronics Corp.]
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| Part No. |
SDB55N02 SDP55N02
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| OCR Text |
... 10V, VGS = 10V VDS = 10V, ID = 26A
Min Typ Max Unit
20 10 V uA 100 nA 0.9 1 14 40 53 1100 600 180 1.5 19 V
m ohm
C
4
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current... |
| Description |
N-Channel E nhancement Mode Field E ffect Transistor
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| File Size |
455.99K /
6 Page |
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it Online |
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SAMHOP[SamHop Microelectronics Corp.]
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| Part No. |
SDB65N03L SDP65N03L SDB65N03
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| OCR Text |
...VGS, ID = 250uA VGS = 10V, ID = 26A VGS = 4.5V, ID = 21A VDS = 10V, VGS = 10V VDS = 10V, ID = 26A
Min Typ C Max Unit
30 10 V uA 100 nA 1 1.5 8 12 65 38 1350 625 190 3 9 V
m ohm
4
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage D... |
| Description |
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
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| File Size |
373.02K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT12040JVFR
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| OCR Text |
26A
S G D
0.400
S
POWER MOS V(R) FREDFET
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resi... |
| Description |
MOSFET
POWER MOS V FREDFET
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| File Size |
121.78K /
4 Page |
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it Online |
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FUJI[Fuji Electric]
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| Part No. |
2SK3680-01
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| OCR Text |
...S=400V VGS=0V VGS=30V VDS=0V ID=26A VGS=10V ID=26A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=26A VGS=10V RGS=10 VCC=250V ID=52A VGS=10V L=544H Tch=25C IF=52A VGS=0V Tch=25C IF=52A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
Min.
500 ... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
109.36K /
4 Page |
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it Online |
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Price and Availability
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